Semiconductor Device with Field Electrode Structure
First Claim
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1. A semiconductor device comprising:
- a semiconductor body comprising a mesa section that comprises a rectifying structure and a first drift zone section;
a field electrode structure surrounded by the mesa section and comprising a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body, wherein an extension of the field electrode in a plane approximately parallel to a first surface of the semiconductor body is less than approximately 500 nm.
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Abstract
According to an embodiment a semiconductor device includes a semiconductor body with a mesa section that may include a rectifying structure and a first drift zone section. The mesa section surrounds a field electrode structure that includes a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body. A maximum horizontal extension of the field electrode in a measure plane parallel to a first surface of the semiconductor body is at most 500 nm.
17 Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor body comprising a mesa section that comprises a rectifying structure and a first drift zone section; a field electrode structure surrounded by the mesa section and comprising a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body, wherein an extension of the field electrode in a plane approximately parallel to a first surface of the semiconductor body is less than approximately 500 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An electronic assembly, comprising:
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a semiconductor device that comprises a semiconductor body comprising a mesa section that comprises a rectifying structure and a first drift zone section; a field electrode structure surrounded by the mesa section and comprising a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body, wherein an extension of the field electrode in a plane approximately parallel to a first surface of the semiconductor body is less than approximately 500 mm. - View Dependent Claims (14, 15)
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16. A semiconductor device, comprising:
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a semiconductor body comprising mesa sections, each mesa section comprising a rectifying structure and a first drift zone section; an at least in segments stripe-shaped field electrode structure sandwiched between two of the mesa sections and comprising a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body, wherein a width of the field electrode in a plane approximately parallel to a first surface of the semiconductor body is less than approximately 100 nm. - View Dependent Claims (17, 18, 19, 20)
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Specification