Semiconductor Device with Current Sensor

• US 20160079377A1
• Filed: 09/14/2015
• Published: 03/17/2016
• Est. Priority Date: 09/15/2014
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hutzler, Michael, Roesch, Maximilian
• Granted Patent: US 9,614,044 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/404 Multiple field plate structures
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7815 with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell

Abstract

A semiconductor device includes a semiconductor body. The semiconductor body includes a load transistor part and a sensor transistor part. A first source region of the load transistor part and a second source region of the sensor transistor part are electrically separated from each other. A common gate electrode in a common gate trench extends into the semiconductor body from a first surface. A first part of the common gate trench is in the load transistor part, and a second part of the common gate trench is in the sensor transistor part. A field electrode in a field electrode trench extends into the semiconductor body from the first surface. A maximum dimension of the field electrode trench parallel to the first surface is smaller than a depth of the field electrode trench.

Claims

1. A semiconductor device, comprising:

a semiconductor body comprising a load transistor part and a sensor transistor part;

a first source region of the load transistor part and a second source region of the sensor transistor part, the first and second source regions being electrically separated from each other;

a common gate electrode in a common gate trench extending into the semiconductor body from a first surface, wherein a first part of the common gate trench is in the load transistor part and a second part of the common gate trench is in the sensor transistor part; and

a field electrode in a field electrode trench extending into the semiconductor body from the first surface, wherein a maximum dimension of the field electrode trench parallel to the first surface is smaller than a depth of the field electrode trench.

2. The semiconductor device of claim 1, wherein the semiconductor device is a vertical semiconductor device comprising a common drain region at a second surface opposing the first surface.

3. The semiconductor device of claim 1, wherein the depth of the common gate trench is smaller than the depth of the field electrode trench.

4. The semiconductor device of claim 1, wherein the field electrode trench has a ratio of a maximum dimension in parallel to the first surface to a depth that lies in a range of 0.05 to 1.

5. The semiconductor device of claim 1, wherein the field electrode trench has a circular shape, a shape of a polygon or a ring shape in a top view of the first surface.

6. The semiconductor device of claim 1, further comprising a plurality of gate trenches including the common gate trench, the gate trenches extending in a first direction parallel to the first surface and arranged in a strip-shaped structure in a top view of the first surface.

7. The semiconductor device of claim 6, further comprising a plurality of field electrode trenches including the field electrode trench arranged along the first direction between two adjacent gate trenches.

8. The semiconductor device of claim 6, further comprising a disconnection part between at least two adjacent gate trenches to electrically separate the first and second source regions, wherein dopants of the first and second source regions are absent in the disconnection part.

9. The semiconductor device of claim 6, further comprising a gate trench extended between at least two adjacent gate trenches to electrically separate the first and second source regions.

10. The semiconductor device of claim 1, further comprising a plurality of gate trenches including the common gate trench, the gate trenches being arranged in a grid-shaped structure in a top view of the first surface.

11. The semiconductor device of claim 10, further comprising a plurality of field electrode trenches including the field electrode trench, the field electrode trenches being arranged at central grid points of the grid-shaped structure of the gate trenches.

12. The semiconductor device of claim 1, further comprising a patterned wiring layer on the first surface of the semiconductor body, the patterned wiring layer comprising a load transistor connection part electrically connected to the first source region, and a sensor transistor connection part electrically connected to the second source region.

13. The semiconductor device of claim 12, wherein the patterned wiring layer is further electrically connected to the field electrode.

14. The semiconductor device of claim 12, wherein the patterned wiring layer comprises a stacked metal layer structure having a first metal layer on the first surface and a second metal layer on the first metal layer, wherein the second metal layer is absent in in a boundary region between the load transistor part and the sensor transistor part.

15. The semiconductor device of claim 14, wherein the first metal layer comprises at least one of a group consisting of Ni, Ti, Ag, Au, W, Pt, and Pd, and wherein the second metal layer comprises at least one of a group consisting of Al, Cu, AlSi, AlCu, and AlSiCu.

16. The semiconductor device of claim 14, wherein a thickness of the first metal layer is in a range of 50 nm to 500 nm, and a thickness of the second metal layer is in a range of 1 μ

m to 10 μ

m.

17. The semiconductor device of claim 12, wherein the patterned wiring layer further comprises a sensor transistor interconnection part in the load transistor part, the sensor transistor interconnection part being electrically connected to the sensor transistor connection part and electrically separated from the load transistor connection part and the first source region.

18. The semiconductor device of claim 17, wherein the first source region is absent in an area of the load transistor part overlapping the sensor transistor interconnection part.

19. The semiconductor device of claim 1, wherein the gate trenches are devoid of field electrodes, and the field electrode trenches are devoid of gate electrodes.

20. The semiconductor device of claim 1, wherein a width of the common gate trench measured perpendicularly to the first direction is smaller than a width of the field electrode trench measured perpendicularly to the first direction.