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SILICON DIOXIDE-POLYSILICON MULTI-LAYERED STACK ETCHING WITH PLASMA ETCH CHAMBER EMPLOYING NON-CORROSIVE ETCHANTS

  • US 20160086771A1
  • Filed: 12/04/2015
  • Published: 03/24/2016
  • Est. Priority Date: 01/25/2013
  • Status: Active Grant
First Claim
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1. A plasma etch apparatus, comprising:

  • a process chamber;

    a chuck disposed in the process chamber to support a substrate while being etched;

    a plurality of source gases plumbed to the chamber, the plurality of source gases including SF6, NF3, CH4, O2, N2, and COS;

    a plurality of RF generators to energize the process gases into a plasma with a plurality of RF frequencies; and

    a pulse controller coupled to the plurality of RF generators, the pulse controller to pulse each of the plurality of RF generators over time between an RF on state and an RF off state synchronously to have all generators in the RF off state concurrently for at least some period of time.

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