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METAL-GATE WITH AN AMORPHOUS METAL LAYER

  • US 20160086805A1
  • Filed: 02/19/2015
  • Published: 03/24/2016
  • Est. Priority Date: 09/24/2014
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a substrate including a source region, a drain region, and a channel;

    a source contact coupled to the source region;

    a drain contact coupled to the drain region; and

    a metal-gate coupled to the channel, the metal-gate including an amorphous metal layer.

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