CARBON NANOTUBE INTERCONNECT STRUCTURE, AND METHOD OF MANUFACTURING THE SAME

• US 20160086889A1
• Filed: 09/01/2015
• Published: 03/24/2016
• Est. Priority Date: 09/18/2014
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Katagiri, Masayuki, Sakai, Tadashi
• Application Number:
  US14/842,040
• Publication Number:
  US 20160086889A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 2221/1094 Conducting structures comprising nanotubes or nanowires
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A carbon nanotube interconnect structure of an embodiment has a first interconnect layer, a first interlayer insulating film on the first interconnect layer, a second interlayer insulating film on the first interlayer insulating film, a contact hole penetrating through the first interlayer insulating film and the second interlayer insulating film, a catalyst metal film on a portion of the first interconnect layer located at a lower end of the contact hole, a second interconnect layer on the second interlayer insulating film, and carbon nanotubes on the catalyst metal film located in the contact hole. The carbon nanotubes electrically connecting the first interconnect layer and the second interconnect layer.

Claims

1. A carbon nanotube interconnect structure comprising:

a first interconnect layer;

a first interlayer insulating film on the first interconnect layer;

a second interlayer insulating film on the first interlayer insulating film;

a contact hole penetrating through the first interlayer insulating film and the second interlayer insulating film;

a catalyst metal film on a portion of the first interconnect layer located at a lower end of the contact hole;

a second interconnect layer on the second interlayer insulating film; and

carbon nanotubes on the catalyst metal film located in the contact hole, the carbon nanotubes electrically connecting the first interconnect layer and the second interconnect layer,

wherein

A and B satisfy B/A>

1.5, and

L and a satisfy L/a≧

2,

where L represents a length of the contact hole,

A represents an opening area at an upper end of the contact hole,

a represents an opening diameter at the upper end of the contact hole, and

B represents an opening area at the lower end of the contact hole.

2. The structure according to claim 1, wherein L and a satisfy L/a≧

10.

3. The structure according to claim 1, wherein a density of the carbon nanotubes at the upper end of the contact hole is higher than a density of the carbon nanotubes at the lower end of the contact hole.

4. The structure according to claim 1, wherein d1 and d2 satisfy d1/d2>

0.04,

where d1 represents a thickness of the first interlayer insulating film in a penetrating direction of the contact hole, and

d2 represents a thickness of the second interlayer insulating film in the penetrating direction of the contact hole.

5. The structure according to claim 1, wherein A, B, and C satisfy A≦

C<

B,

where C represents an opening area of the contact hole at an interface between the first interlayer insulating film and the second interlayer insulating film.

6. The structure according to claim 1, wherein θ

1 and θ

2 satisfy θ

2/θ

1<

2, and θ

1≧

45°

,

where b represents an opening diameter at the lower end of the contact hole,

c represents an opening diameter of the contact hole at an interface between the first interlayer insulating film and the second interlayer insulating film,

cot θ

1=(b−

c)/2d1, and

cot θ

2=(c−

a)/2d1.

7. The structure according to claim 1, wherein an insulative or conductive embedded film is provided in a void between the carbon nanotubes.

8. The structure according to claim 1, wherein the opening diameter a is not smaller than 50 nm and not greater than 100 nm.

9. The structure according to claim 1, wherein a density of the carbon nanotubes in a region surrounded by the second interlayer insulating film is 10¹²/cm² or higher.

10. A method of manufacturing a carbon nanotube interconnect structure, comprising:

forming a first interconnect layer;

forming a first interlayer insulating film on the first interconnect layer;

forming a second interlayer insulating film on the first interlayer insulating film;

forming a contact hole penetrating through the first interlayer insulating film and the second interlayer insulating film by performing etching on the first interlayer insulating film and the second interlayer insulating film;

further performing etching on the first interlayer insulating film, to form a larger opening area than an upper end portion of the contact hole;

forming a catalyst metal film in the contact hole;

forming carbon nanotubes on the catalyst metal film;

planarizing the carbon nanotubes; and

forming a second interconnect layer on the planarized carbon nanotubes and the second interlayer insulating film.

11. The method according to claim 10, further comprising performing a treatment to turn the catalyst metal film into nanoparticles, prior to the forming the carbon nanotubes.

12. The method according to claim 10, wherein

the first interlayer insulating film and the second interlayer insulating film have different etching rates from each other, and

an etching gas used in the forming the contact hole differs from an etching gas used in the further performing etching on the first interlayer insulating film.

13. A method of manufacturing a carbon nanotube interconnect structure, comprising:

forming a first interconnect layer;

forming a catalyst metal film on the first interconnect layer;

forming a first interlayer insulating film on the catalyst metal film;

forming a second interlayer insulating film on the first interlayer insulating film;

forming a contact hole penetrating through the first interlayer insulating film and the second interlayer insulating film by performing etching on the first interlayer insulating film and the second interlayer insulating film;

further performing etching on the first interlayer insulating film, to form a larger opening area than an upper end portion of the contact hole;

forming carbon nanotubes on the catalyst metal film;

planarizing the carbon nanotubes; and

forming a second interconnect layer on the planarized carbon nanotubes and the second interlayer insulating film.

14. The method according to claim 13, further comprising

performing a treatment to turn the catalyst metal film into nanoparticles, prior to the forming the carbon nanotubes.

15. The manufacturing method according to claim 13, wherein

the first interlayer insulating film and the second interlayer insulating film have different etching rates from each other, and

an etching gas used in the forming the contact hole differs from an etching gas used in the further performing etching on the first interlayer insulating film.