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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20160087045A1
  • Filed: 07/30/2015
  • Published: 03/24/2016
  • Est. Priority Date: 09/19/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a SiC layer;

    a gate electrode;

    a gate insulating film provided between the SiC layer and the gate electrode;

    a first region provided between the SiC layer and the gate insulating film, the first region containing at least one element selected from the group consisting of N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), Sc (scandium), Y (yttrium), La (lanthanum), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu), H (hydrogen), D (deuterium), and F (fluorine); and

    a second region provided in the SiC layer, the second region provided adjacent to the first region, the second region having a higher oxygen concentration than a concentration of the at least one element.

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