HIGH SPEED SURFACE PLASMON COUPLED LIGHT EMITTING DIODES
First Claim
1. A light emitting diode device (LED) comprising:
- a first-doped layer on a substrate;
an active layer on the first-doped layer;
a second-doped layer on the active layer; and
a metal layer on the second-doped layer,wherein the second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion, andwherein the first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED, andwherein the second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.
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Accused Products
Abstract
A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.
16 Citations
45 Claims
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1. A light emitting diode device (LED) comprising:
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a first-doped layer on a substrate; an active layer on the first-doped layer; a second-doped layer on the active layer; and a metal layer on the second-doped layer, wherein the second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion, and wherein the first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED, and wherein the second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for fabricating a light emitting diode (LED), the method comprising:
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depositing a first-doped GaN layer with first impurities on a substrate; forming one or more quantum well layers on the first-doped layer; depositing a second-doped GaN layer with second impurities on the quantum well layer; selectively etching the second-doped layer; and depositing a metal layer over the second-doped layer, wherein depositing the second-doped layer comprises depositing the second-doped layer to a thickness to ensure formation of a p-n junction in the LED, and wherein selectively etching of the second-doped layer comprises etching selective portions of the second-doped layer to a surface plasmon thickness where electron-hole pairs in the quantum well layer couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer for an increased spontaneous emission rate of the LED. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A method for fabricating a light emitting diode (LED), the method comprising:
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depositing a first-doped GaN layer with first impurities on a substrate; forming one or more quantum well layers on the first-doped layer; depositing a second-doped GaN layer with second impurities on the quantum well layer; depositing a metal layer over the second-doped layer, wherein depositing the second-doped GaN layer comprises depositing a first portion of the second-doped GaN layer to have a first thickness and a second portion of the second-doped GaN layer to have a second thickness, the first thickness being defined as a surface plasmon thickness that cause electron-hole pairs in the one or more quantum well layers to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer for an increased spontaneous emission rate of the LED and the second thickness being determined to ensure formation of a p-n junction in the LED. - View Dependent Claims (36, 37, 38, 39, 40, 41)
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42. A method for fabricating a light emitting diode (LED), the method comprising:
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depositing a first doped layer with first impurities on a substrate; forming an active layer on the first-doped layer; depositing a second doped layer with second impurities on the active layer; nanopatterning the second-doped layer; and depositing a metal layer over the second-doped layer, wherein depositing the second-doped layer comprises depositing the second-doped layer to a thickness to ensure formation of a p-n junction in the LED, and wherein nanopatterning the second-doped layer comprises nanopatterning portions of the second doped layer to a surface plasmon thickness to cause electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface between the metal layer and the second-doped layer for an increased spontaneous emission rate of the LED. - View Dependent Claims (43, 44, 45)
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Specification