SEMICONDUCTOR APPARATUS

• US 20160091911A1
• Filed: 01/07/2015
• Published: 03/31/2016
• Est. Priority Date: 09/25/2014
• Status: Active Grant

• Current Assignee: SK Hynix Inc.
• Original Assignee: SK Hynix Inc.
• Inventors: KIM, Jong Sam
• Granted Patent: US 9,915,964 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G05F 1/656 using variable impedances in series and in parallel with the load as final control devices

Abstract

A semiconductor apparatus includes a control block that generates a first control signal, a second control signal, and a heating enable signal in response to an enable signal and a heating control signal, a temperature measurement block that generates a temperature code corresponding to temperature in response to the first and second control signals, a heater that generates heat while the heating enable signal is being enabled, a code latch block that stores the temperature code in response to the first and second control signals, and outputs a first code and a second code, a control code generation circuit that generates a signal by performing an operation on the first and second codes, and generates a control code by comparing the signal with a preset code, and a reference voltage generation circuit configured to change a voltage level of a reference voltage in response to the control code.

Claims

1. A semiconductor apparatus comprising:

a control block configured to generate a first control signal, a second control signal, and a heating enable signal in response to an enable signal and a heating control signal;

a temperature measurement block configured to generate a temperature code corresponding to temperature in response to the first and second control signals;

a heater configured to generate heat while the heating enable signal is being enabled;

a code latch block configured to store the temperature code in response to the first and second control signals, and output a first code and a second code;

a control code generation circuit configured to generate a signal by performing an operation on the first and second codes, and generate a control code by comparing the signal with a preset code; and

a reference voltage generation circuit configured to change a voltage level of a reference voltage in response to the control code.

2. The semiconductor apparatus according to claim 1, wherein the control block enables the first control signal when the enable signal is enabled, enables the heating enable signal after the first control signal is disabled, and enables the second control signal when the heating enable signal is disabled.

3. The semiconductor apparatus according to claim 2, wherein the duration that the heating enable signal remains enabled is determined in response to the heating control signal.

4. The semiconductor apparatus according to claim 3, wherein the control block comprises:

a first control signal generation unit configured to enable the first control signal when the enable signal is enabled;

a heating enable signal generation unit configured to decide the duration that the heating enable signal remains enabled in response to the heating control signal, and enable the heating enable signal when a predetermined time has passed after the first control signal is disabled; and

a second control signal generation unit configured to enable the second control signal when the heating enable signal is disabled.

5. The semiconductor apparatus according to claim 1, wherein, when any one of the first control signal and the second control signal is enabled, the temperature measurement block generates the temperature code corresponding to temperature.

6. The semiconductor apparatus according to claim 1, wherein the code latch block comprises:

a first latch unit configured to store the temperature code and output the first code when the first control signal is enabled; and

a second latch unit configured to store the temperature code and output the second code when the second control signal is enabled.

7. The semiconductor apparatus according to claim 1, wherein the control code generation circuit comprises:

a subtraction block configured to perform a subtraction operation on the first code and the second code, and generate a subtraction code; and

a comparison block configured to compare the preset code with the subtraction code, and generate the control code.

8. The semiconductor apparatus according to claim 7, wherein the comparison block generates the control code, which has a preset value, when the preset code is substantially equal to the subtraction code, and generates a control code which has a smaller or larger value than the preset value when a code value of the preset code is larger or smaller than a code value of the subtraction code.

9. The semiconductor apparatus according to claim 1, wherein the reference voltage generation circuit comprises:

a bias voltage generation block configured to generate a bias voltage;

a voltage applying block configured to apply a voltage to an output node in response to a voltage level of the bias voltage; and

a variable resistance block coupled to the output node and a ground terminal,

wherein a resistance value of the variable resistance block is determined in response to the control code, and

wherein the reference voltage is outputted from the output node.

10. A semiconductor apparatus comprising:

a temperature code generation circuit configured to generate a first code corresponding to temperature before a heating operation and generate a second code corresponding to temperature after the heating operation in response to an enable signal;

a control code generation circuit configured to generate a control code in response to the first code and the second code; and

a reference voltage generation circuit configured to generate a reference voltage having a voltage level corresponding to the control code.

11. The semiconductor apparatus according to claim 10, wherein the temperature code generation circuit comprises:

a heater configured to generate heat;

a temperature measurement block configured to generate a temperature code corresponding to temperature;

a latch block configured to store the temperature code before and after the heating operation, and output the first and second codes; and

a control block configured to control the heater, the temperature measurement block, and the latch block in response to the enable signal.

12. The semiconductor apparatus according to claim 11, wherein the control block generates a heating enable signal, a first control signal, and a second control signal in response to the enable signal.

13. The semiconductor apparatus according to claim 12, wherein the control block enables the first control signal when the enable signal is enabled, enables the heating enable signal after the first control signal is disabled, and enables the second control signal when the heating enable signal is disabled.

14. The semiconductor apparatus according to claim 13, wherein the control block comprises:

a first control signal generation unit configured to generate the first control signal that is enabled when the enable signal is enabled;

a heating enable signal generation unit configured to generate the heating enable signal that is enabled after the first control signal is disabled; and

a second control signal generation unit configured to generate the second control signal that is enabled when the heating enable signal is disabled.

15. The semiconductor apparatus according to claim 14, wherein the heating enable signal generation unit generates the heating enable signal having an enable period, the duration of which is determined in response to a heating control signal, the duration of which is determined in response to the first control signal.

16. The semiconductor apparatus according to claim 13, wherein the heater generates heat for the enable period of the heating enable signal.

17. The semiconductor apparatus according to claim 13, wherein, when one of the first and second control signals is enabled, the temperature measurement block generates the temperature code corresponding to temperature.

18. The semiconductor apparatus according to claim 13, wherein the latch block stores the temperature code and outputs the first code when the first control signal is enabled, and stores the temperature code and outputs the second code when the second control signal is enabled.

19. The semiconductor apparatus according to claim 10, wherein the control code generation circuit compares a subtraction code, which is generated by performing a subtraction operation on the first and second control codes, with a preset code, and generates the control code.

20. The semiconductor apparatus according to claim 10, wherein the reference voltage generation circuit comprises:

a bias voltage generation block configured to generate a bias voltage;

a voltage applying block configured to apply a voltage corresponding to a voltage level of the bias voltage to an output node; and

a variable resistance block coupled to the output node and a ground terminal,

wherein a resistance value of the variable resistance block is determined in response to the control code, and

wherein the reference voltage is outputted from the output node.