STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE
First Claim
1. An operating method of a storage device which includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory, the nonvolatile memory comprising a plurality of cell strings arranged on a substrate, each of the cell string including a ground selection transistor, a plurality of memory cells and a string selection transistor sequentially stacked on the substrate, the operating method comprising:
- receiving a read command and a read address;
performing a read operation about memory cells of the nonvolatile memory, selected by the read address, according to the read command;
performing a reliability verification read operation about unselected memory cells of the nonvolatile memory which are not the selected memory cells; and
calculating a difference between a count value and a reference count value, including counting a number of memory cells, each corresponding to at least one state of an erase state and program states of the unselected memory cells, to define the count value based on a result of the reliability verification read operation; and
outputting data read with the read operation to an external device and not outputting data read with the reliability verification read operation to the external device.
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Accused Products
Abstract
An operating method is provided which includes receiving a read command and a read address, performing a read operation about memory cells selected according to the read address, and performing a reliability verification read operation about unselected memory cells adjacent to the selected memory cells. A number of memory cells each corresponding to at least one state of an erase state and program states of the unselected memory cells is counted as a count value based on the result of the reliability verification read operation. Data read through the read operation is output to an external device and data read through the reliability verification read operation is not output to the external device.
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Citations
20 Claims
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1. An operating method of a storage device which includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory, the nonvolatile memory comprising a plurality of cell strings arranged on a substrate, each of the cell string including a ground selection transistor, a plurality of memory cells and a string selection transistor sequentially stacked on the substrate, the operating method comprising:
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receiving a read command and a read address; performing a read operation about memory cells of the nonvolatile memory, selected by the read address, according to the read command; performing a reliability verification read operation about unselected memory cells of the nonvolatile memory which are not the selected memory cells; and calculating a difference between a count value and a reference count value, including counting a number of memory cells, each corresponding to at least one state of an erase state and program states of the unselected memory cells, to define the count value based on a result of the reliability verification read operation; and outputting data read with the read operation to an external device and not outputting data read with the reliability verification read operation to the external device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A storage device, comprising:
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a nonvolatile memory including a plurality of cell strings arranged on a substrate, each of the cell string including a ground selection transistor, a plurality of memory cells and a string selection transistor sequentially stacked on the substrate; and a memory controller to control the nonvolatile memory; wherein each cell string includes a ground selection transistor, a plurality of memory cells, and a string selection transistor sequentially stacked on the substrate in a direction perpendicular to the substrate; and wherein the memory controller is configured to read data from selected memory cells of the nonvolatile memory in response to a request of an external device, perform a reliability verification read operation including counting a number of memory cells corresponding to at least one state of an erase state and program states of unselected memory cells adjacent to the selected memory cells to define a count value, and perform a read reclaim operation about the unselected memory cells based upon a result of the counting. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification