COMPOUND MICRO-ASSEMBLY STRATEGIES AND DEVICES

• US 20160093600A1
• Filed: 08/10/2015
• Published: 03/31/2016
• Est. Priority Date: 09/25/2014
• Status: Active Application

• Current Assignee: X Display Company Technology Limited (Sensinnovat BVBA)
• Original Assignee: X-Celeprint Limited
• Inventors: Bower, Christopher, Meitl, Matthew
• Application Number:
  US14/822,868
• Publication Number:
  US 20160093600A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/485 Adaptation of interconnections, e.g. engineering charges, repair techniques
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68372 used to support a device or wafer when forming electrical connections thereto when forming bonding pads H01L24/03; when forming bump connectors H01L24/11; when forming layer connectors H01L24/27
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/95001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/95136 involving guiding structures, e.g. shape matching, spacers or supporting members
• CPC Class Codes: H01L 23/5382 Adaptable interconnections, e.g. for engineering changes
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01Q 1/2283 : mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 21/0087 : Apparatus or processes specially adapted for manufacturing antenna arrays manufacturing waveguides H01P11/00
• CPC Class Codes: H01Q 3/267 : Phased-array testing or checking devices

Abstract

The disclosed technology relates generally to designs and methods of assembling devices utilizing compound micro-assembly. Functional elements are micro-assembled to form an array of individual micro-systems on an intermediate substrate, then the microsystems are transferred (one or more at a time) to a destination or device substrate. For example, for a display device, each micro-system may be an individual pixel containing red, blue, and green micro LEDs and a silicon drive circuit. An array of pixels may be formed by micro-transfer printing functional elements onto the intermediate substrate and electrically connecting them via fine lithography, then the individual pixels may be micro-transfer printed onto the destination substrate.

Claims

1. A method of compound micro-assembly, the method comprising:

providing a transfer device having a contact surface with a micro-system temporarily attached thereto, wherein the micro-system comprises;

an intermediate substrate,

a plurality of micro-devices disposed on the intermediate substrate, and

one or more fine interconnections electrically connected to at least a portion of the plurality of micro-devices, thereby electrically coupling the portion of the micro-devices;

contacting the micro-system disposed on the transfer surface with a receiving surface of a destination substrate; and

separating the contact surface of the transfer device and the micro-system, thereby transferring the micro-system onto the receiving surface of the destination substrate.

2. The method of claim 1, comprising:

after transferring the micro-system onto the receiving surface of the destination substrate, electrically connecting the micro-system to one or more additional micro-systems on the destination substrate utilizing crude interconnections having a width from 10 μ

m to 2 mm, thereby forming a macro-system.

3. The method of claim 1 or 2, wherein providing the transfer device having the contact surface with the micro-system supported thereon and/or temporarily attached thereto comprises:

forming a first micro-device of the plurality of micro-devices on a first native substrate;

forming a second micro-device of the plurality of micro-devices on a second native substrate;

transferring the first micro-device and the second micro-device from the respective native substrates onto the intermediate substrate; and

electrically connecting the first micro-device and the second micro-device using the one or more fine interconnections, said fine interconnections having a width of 100 nm to 10 μ

m, thereby forming the micro-system.

4. The method of claim 3, comprising:

after electrically connecting the first micro-device and the second micro-device using fine interconnections, testing the micro-system while on the intermediate substrate.

5. The method of claim 3, comprising:

after transferring the first micro-device and the second micro-device onto the intermediate substrate, partially releasing the micro-system from the bulk intermediate substrate such that the micro-system is connected to the bulk intermediate substrate by a tether to facilitate controlled separation of the micro-system from the bulk intermediate substrate to the contact surface of the transfer device.

6. The method of claim 5, wherein the fine interconnections are at least in part on or in the tether.

7. The method of claim 5, wherein the tether is connected to an anchor on the intermediate substrate.

8. The method of claim 7, wherein each of the one or more fine interconnections is at least in part on or in the anchor.

10. The method of claim 1, wherein the intermediate substrate is non-native to the first and second micro-devices.

12. The method of claim 1, wherein the plurality of micro-devices comprises:

a red micro inorganic light emitting diode,

a green micro inorganic light emitting diode, and

a blue micro inorganic light emitting diode.

9. (canceled)

11. (canceled)

13-25. -25. (canceled)

26. A compound micro-assembled device comprising:

a plurality of printed micro-systems on a destination non-native substrate, wherein each micro-system of the plurality of printed micro-systems comprises;

a plurality of micro-devices disposed on an intermediate, non-native substrate, and

one or more fine interconnections having a width of 100 nm to 1 μ

m electrically connecting the plurality of micro-devices; and

one or more crude lithography interconnections having a width from 2 μ

m to 2 mm, wherein each crude lithography interconnection is electrically connected to at least one of the plurality of micro-systems on the non-native substrate.

27. The device of claim 26, wherein the plurality of micro-devices comprises:

a red micro inorganic light emitting diode,

a green micro inorganic light emitting diode,

a blue micro inorganic light emitting diode, and

a micro-integrated circuit.

28. The device of claim 27, wherein the plurality of micro-devices comprises a second red micro inorganic light emitting diode, a second blue micro inorganic light emitting diode, and a second green micro inorganic light emitting diode.

29. The device of claim 27, wherein each micro-system forms a pixel.

30. The device of claim 26, comprising over 300,000 micro inorganic light-emitting diodes.

31. The device of claim 26, wherein the plurality of micro-devices comprises:

a power amplifier (e.g., GaN),

a phase shifter (e.g., GaAs), and

a micro-integrated circuit (e.g., silicon control circuit).

34. The device of claim 26, wherein the destination non-native substrate is non-native to one of the plurality of micro-devices.

35. The device of claim 26, wherein the destination non-native substrate is a member selected from the group consisting of polymer, plastic, resin, polyimide, PEN, PET, metal, metal foil, glass, a semiconductor, and sapphire.

40. The device of claim 26, wherein each of the plurality of micro devices has at least one of a length, width, and height from 2 to 5 μ

m, 5 to 10 μ

m, 10 to 20 μ

m, or 20 to 50 μ

m.

41. The device of claim 26, wherein the destination substrate has a thickness from 5 to 10 microns, 10 to 50 microns, 50 to 100 microns, 100 to 200 microns, 200 to 500 microns, 500 microns to 0.5 mm, 0.5 to 1 mm, 1 mm to 5 mm, 5 mm to 10 mm, or 10 mm to 20 mm.

32-33. -33. (canceled)

36-39. -39. (canceled)

42-57. -57. (canceled)