LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE ARRAY

• US 20160093667A1
• Filed: 12/08/2015
• Published: 03/31/2016
• Est. Priority Date: 11/05/2012
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: CHOI, Byung Yeon, Beom, Hee Young, Lee, Yong Gyeong, Lee, Ji Hwan, Ju, Hyun Seoung, Hong, Gi Seok
• Granted Patent: US 9,640,583 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.

Claims

1. A light emitting device, comprising:

a substrate;

a light emitting structure including lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers, the light emitting structure being disposed on the substrate;

a first electrode disposed on the upper semiconductor layer; and

a current blocking layer disposed between the upper semiconductor layer and the first electrode,

wherein the first electrode includes a first adhesive layer and a first bonding layer overlapping each other,

wherein a reflective layer is not disposed between the first adhesive layer and the first bonding layer, and

wherein the first adhesive layer is disposed to surround upper and side parts of the current blocking layer.

2. The light emitting device according to claim 1, wherein the first electrode further comprises a first barrier layer disposed on the first adhesive layer with contacting the first adhesive layer.

3. The light emitting device according to claim 1, further comprising a second electrode disposed on the lower semiconductor layer,

wherein the second electroder includes a second adhesive layer and a second bonding layer overlapping each other, and

wherein a reflective layer is not disposed between the second adhesive layer and the second bonding layer.

4. The light emitting device according to claim 3, wherein the second electrode further comprises a second barrier layer disposed on the second adhesive layer with contacting the second adhesive layer.

5. The light emitting device according to claim 1, wherein the first adhesive layer comprises at least one of Cr, Rd, or Ti.

6. The light emitting device according to claim 2, wherein the first barrier layer comprises at least one of Ni, Cr, Ti, or Pt.

7. The light emitting device according to claim 1, wherein the first adhesive layer has a thickness of at least 2 nm to 15 nm.

8. The light emitting device according to claim 1, wherein the first bonding layer has a thickness of 100 nm to 2,000 nm.

9. The light emitting device according to claim 1, wherein the first electrode has a width of 5 μ

m to 100 μ

m.

10. A light emitting device array, comprising:

a substrate;

a plurality of light emitting devices spaced from one another in a horizontal direction on the substrate;

a conductive interconnection layer to connect two light emitting devices among the plurality of light emitting devices; and

a first insulating layer disposed between the light emitting devices and the conductive interconnection layer,

wherein respective light emitting devices comprise;

a light emitting structure including lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers;

a first electrode disposed on the upper semiconductor layer;

a second electrode disposed on the lower semiconductor layer; and

a current blocking layer disposed between the light emitting structure and the first electrode,

wherein the conductive interconnection layer connects the first electrode of one of the two light emitting devices to the second electrode of the other of the two light emitting devices,

wherein the first electrode includes a first adhesive layer and a first bonding layer overlapping each other,

wherein a reflective layer is not disposed between the first adhesive layer and the first bonding layer, and

wherein the first adhesive layer is disposed to surround upper and side parts of the current blocking layer.

11. The light emitting device array according to claim 10, wherein the conductive interconnection layer comprises a third adhesive layer and a third bonding layer overlapping each other, and

wherein a reflective layer is not disposed between the third adhesive layer and the third bonding layer.

12. The light emitting device array according to claim 11, wherein the conductive interconnection layer further comprises a third barrier layer on the third adhesive layer with contacting the third adhesive layer.

13. The light emitting device array according to claim 10, further comprising a second insulating layer disposed between the first insulating layer and the light emitting devices.

14. The light emitting device array according to claim 13, wherein at least one of the first insulating layer or second insulating layer is a distributed Bragg reflector.

15. The light emitting device array according to claim 10, wherein the first and second electrode of the two light emitting devices connected through the conductive interconnection layer and the conductive interconnection layer are integrated with one another.

16. The light emitting device array according to claim 10, wherein each light emitting device further comprises a conductive layer disposed between the upper semiconductor layer and the first electrode.

17. The light emitting device array according to claim 16, wherein the conductive interconnection layer point-contacts the conductive layer or the lower semiconductor layer.

18. The light emitting device array according to claim 16, wherein the current blocking layer is spaced from the first insulating layer between the light emitting structure and the first electrode.

19. The light emitting device array according to claim 10, wherein a thickness of the conductive interconnection layer is greater than that of the first electrode.

20. The light emitting device array according to claim 10, wherein the current blocking layer includes a distributed Bragg Reflector.