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Method of Manufacturing a Semiconductor Device and Semiconductor Device

  • US 20160093731A1
  • Filed: 09/29/2015
  • Published: 03/31/2016
  • Est. Priority Date: 09/30/2014
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device including a transistor, comprising:

  • forming field plate trenches in a main surface of a semiconductor substrate, a drift zone being defined between adjacent field plate trenches;

    forming a field dielectric layer in the field plate trenches;

    thereafter, forming gate trenches in the main surface of the semiconductor substrate, a channel region being defined between adjacent gate trenches; and

    forming a conductive material in at least some of the field plate trenches and in at least some of the gate trenches,the method further comprising forming a source region and forming a drain region in the main surface of the semiconductor substrate.

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