HYBRID ENERGY HARVESTING DEVICE

• US 20160094072A1
• Filed: 09/26/2014
• Published: 03/31/2016
• Est. Priority Date: 09/26/2014
• Status: Abandoned Application

• Current Assignee: Yuanning Chen
• Original Assignee: Yuanning Chen
• Inventors: Chen, Yuanning, Wang, Wenzhang
• Application Number:
  US14/497,770
• Publication Number:
  US 20160094072A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 31/02021 for solar cells electrical connection means, e.g. junction boxes, specially adapted for structural association with photovoltaic modules H02S40/34
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/053 Energy storage means directly associated or integrated with the PV cell, e.g. a capacitor integrated with a PV cell energy storage means associated with the PV module H02S40/38
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/1864 Annealing
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: H01Q 1/248 provided with an AC/DC converting device, e.g. rectennas
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 5/22 RF wavebands combined with non-RF wavebands, e.g. infrared or optical
• CPC Class Codes: H01Q 9/42 with folded element, the folded parts being spaced apart a small fraction of the operating wavelength
• CPC Class Codes: H02J 50/005 Mechanical details of housing or structure aiming to accommodate the power transfer means, e.g. mechanical integration of coils, antennas or transducers into emitting or receiving devices
• CPC Class Codes: H02J 50/27 characterised by the type of receiving antennas, e.g. rectennas
• CPC Class Codes: H02J 7/35 with light sensitive cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/56 Power conversion systems, e.g. maximum power point trackers

Abstract

In one aspect, a hybrid energy harvesting device is presented that comprises a photovoltaic device having a substrate that forms a first side of the photovoltaic device. The substrate has a surface through which photons can pass to produce an electrical current within the photovoltaic device. An electrical storage device is located on a second side of the photovoltaic device that opposes the first side, and an antenna is located on one of the first or second sides of the photovoltaic device. The photovoltaic device and the antenna are electrically coupled to the electrical storage device.

Claims

1. A hybrid energy harvesting device, comprising:

a photovoltaic device having a substrate that forms a first side of said photovoltaic device, said substrate having a surface through which photons can pass to produce an electrical current within said photovoltaic device;

an electrical storage device located on a second side of said photovoltaic device that opposes said first side; and

an antenna located on one of said first or second sides of said photovoltaic device, said photovoltaic device and said antenna electrically coupled to said electrical storage device.

2. The hybrid energy harvesting device of claim 1, wherein said substrate is a doped silicon substrate doped with opposite dopants to form oppositely doped tub regions and a p-n junction in said doped silicon substrate, and further comprising an antireflective layer located on said surface and having first and second electrical contacts formed therein that contact said oppositely doped tub regions, respectively.

3. The hybrid energy harvesting device of claim 1, wherein said storage device is a capacitor and said antenna is located on an outer surface of said capacitor.

4. The hybrid energy harvesting device of claim 3, wherein said capacitor is a trench capacitor that includes a capacitor dielectric layer comprising Al₂O₃/TiO_x nanolaminate.

5. The hybrid energy harvesting device of claim 1, wherein said antenna has a “

J”

shape or a “

C”

shape configuration.

6. The hybrid energy harvesting device of claim 5, wherein said antenna has said “

C”

shape configuration, which allows said antenna to receive radio frequency (RF) signals ranging from about 915 MHz to about 2.4 GHz and convert said RF signals into an electrical current.

7. The hybrid energy harvesting device of claim 1, wherein said photovoltaic device comprises layers of cadmium sulfide (CdS) and cadmium telluride (CdTe) located over said substrate.

8. The hybrid energy harvesting device of claim 7, further comprising a low resistivity transparent conductive oxide (TCO) layer located on said substrate, a cadmium sulfide (CdS) layer located on said TCO layer, a cadmium telluride (CdTe) layer located on said CdS layer, and a metal layer located on said CdTe layer.

9. The hybrid energy harvesting device of claim 8 further comprising a dielectric layer located on said metal layer, and wherein said energy storage device is located on said dielectric layer.

10. A method of fabricating a hybrid energy harvesting device, comprising:

forming a photovoltaic device having a substrate that forms a first side of said photovoltaic device, said substrate having a surface through which photons can pass to produce an electrical current within said photovoltaic device;

fabricating an electrical storage device located on a second side of said photovoltaic device that opposes said first side;

forming an antenna located on one of said first or second sides of said photovoltaic device; and

electrically coupling said antenna and said photovoltaic device to said electrical storage device.

11. The method of claim 10, wherein said substrate is a silicon substrate and forming said photovoltaic device comprises doping said silicon substrate with opposite dopants to form oppositely doped tub regions and p-n junctions in said doped silicon substrate, and further comprising depositing an antireflective layer on said surface, said antireflective layer having first and second electrical contacts formed therein that contact said oppositely doped tub regions, respectively.

12. The method of claim 10, wherein fabricating a storage device comprises fabricating a capacitor on said second side, and forming an antenna comprises locating said antenna on an outer surface of said capacitor, and further comprising anneal said photovoltaic device with a laser anneal.

13. The method of claim 12, wherein said capacitor is a trench capacitor.

14. The method of claim 10, wherein forming an antenna comprises forming said antenna in a “

J”

shape or a “

C”

shape configuration using an inkjet deposition process.

15. The method of claim 14, wherein forming said antenna comprises forming said antenna in said “

C”

shape configuration, which allows said antenna to receive radio frequency (RF) signals ranging from about 915 MHz to about 2.4 GHz and convert said RF signals into an electrical current.

16. The method of claim 10, wherein forming a photovoltaic device comprises depositing a cadmium sulfide (CdS) layer over said substrate and depositing a cadmium telluride (CdTe) layer on said CdS layer.

17. The method of claim 16, further comprising forming a low resistivity transparent conductive oxide (TCO) layer on said substrate, depositing said CdS layer on said TCO layer, depositing said CdTe layer on said CdS layer, depositing a metal layer on said CdTe layer.

18. The method of claim 17 further comprising forming a dielectric layer on said metal layer, and wherein said energy storage device is located on said dielectric layer.

19. A hybrid energy harvesting device, comprising:

a photovoltaic device having a substrate that forms a first side of said photovoltaic device, said substrate having a surface through which photons can pass to produce an electrical current within said photovoltaic device;

a capacitor located on a second side of said photovoltaic device that opposes said first side; and

an antenna located on one of said first or second sides of said photovoltaic device, said antenna having a “

J”

shape configuration or a “

C”

shape configuration, and said photovoltaic device and said antenna electrically coupled to said capacitor.

20. The hybrid energy harvesting device of claim 19, wherein said substrate is a doped silicon or silicon substrate doped with opposite dopants to form oppositely doped tube regions and pn junctions within said silicon or silicon substrate, and further comprising an antireflective layer located on said surface and having first and second electrical contacts formed therein that contact said oppositely doped tub regions, respectively.

21. The hybrid energy harvesting device of claim 19, wherein said capacitor is a trench capacitor.

22. The hybrid energy harvesting device of claim 19, wherein said antenna has said “

C”

shape configuration, which allows said antenna to receive radio frequency (RF) signals ranging from about 915 MHz to about 2.4 GHz and convert said RF signals into an electrical current.

23. The hybrid energy harvesting device of claim 19, further comprising a low resistivity transparent conductive oxide (TCO) layer located on said substrate, a cadmium sulfide (CdS) layer located on said TCO layer, a cadmium telluride (CdTe) layer located on said CdS layer, and a metal layer located on said CdTe layer.

24. The hybrid energy harvesting device of claim 23 further comprising a dielectric layer located on said metal layer, and wherein said energy storage device is located on said dielectric layer.

25. A sensor node, comprising.

a circuit board,

a hybrid energy harvesting device located on and electrically coupled to said circuit board and comprising:

a photovoltaic device having a substrate that forms a first side of said photovoltaic device, said substrate having a surface through which photons can pass to produce an electrical current within said photovoltaic device;

an electrical storage device located on a second side of said photovoltaic device that opposes said first side; and

an antenna located on one of said first or second sides of said photovoltaic device, said photovoltaic device and said antenna electrically coupled to said electrical storage device;

a solar conversion circuit located on and electrically coupled to said circuit board to electrically couple said solar conversion circuit to said photovoltaic device and said electrical storage device;

a radio frequency circuit located on and electrically coupled to said circuit board to electrically couple said radio frequency circuit to said antenna and said electrical storage device; and

a digital processing circuit located on and electrically coupled to said circuit board to electrically couple said digital processing circuit to said storage device.