VERTICAL SEMICONDUCTOR DEVICES INCLUDING SUPERLATTICE PUNCH THROUGH STOP LAYER AND RELATED METHODS
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Accused Products
Abstract
A semiconductor device may include a substrate, and a plurality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin portion extending vertically upward from the substrate, and at least one superlattice punch-through layer on the lower fin portion. The superlattice punch-through layer may include a plurality of stacked groups of layers, with each group of layers of the superlattice punch-through layer comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Each fin may also include an upper semiconductor fin portion on the at least one superlattice punch-through layer and extending vertically upward therefrom. The semiconductor device may also include source and drain regions at opposing ends of the fins, and a gate overlying the fins.
50 Citations
23 Claims
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1-11. -11. (canceled)
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12. A semiconductor device comprising:
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a substrate; a plurality of fins spaced apart on said substrate, each of said fins comprising a lower semiconductor fin portion extending vertically upward from the substrate, at least one superlattice punch-through stop layer on the lower fin portion, said superlattice punch-through stop layer including a plurality of stacked groups of layers, each group of layers of the superlattice punch-through stop layer comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, and an upper semiconductor fin portion on said at least one superlattice punch-through stop layer and extending vertically upward therefrom; source and drain regions at opposing ends of the fins; and a gate overlying the fins. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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21. A semiconductor device comprising:
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a substrate; a plurality of fins spaced apart on said substrate, each of said fins comprising a lower semiconductor fin portion extending vertically upward from the substrate, at least one superlattice punch-through stop layer on the lower fin portion, said superlattice punch-through stop layer including a plurality of stacked groups of layers, each group of layers of the superlattice punch-through stop layer comprising a plurality of stacked base silicon monolayers defining a base silicon portion and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, and an upper semiconductor fin portion on said at least one superlattice punch-through stop layer and extending vertically upward therefrom; source and drain regions at opposing ends of the fins; and a gate overlying the fins. - View Dependent Claims (22, 23)
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Specification