NICKEL PHOSPHOROUS CMP COMPOSITIONS AND METHODS

• US 20160102227A1
• Filed: 10/13/2015
• Published: 04/14/2016
• Est. Priority Date: 10/14/2014
• Status: Active Grant

• Current Assignee: CMC Materials LLC (Fujifilm Holdings Corporation)
• Original Assignee: Cabot Microelectronics Corporation (Entegris Incorporated)
• Inventors: ZHANG, Ke, PALANISAMY CHINNATHAMBI, Selvaraj
• Granted Patent: US 9,469,787 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B24B 37/11 Lapping tools
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L

Abstract

A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP.

Claims

1. A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate, the composition comprising a suspension of about 1 to about 20 percent by weight (wt %) of colloidal silica particles and about 0.3 to about 10 wt % of fused silica particles in an acidic aqueous carrier comprising a primary oxidizing agent that includes hydrogen peroxide;

wherein the concentration of the fused silica particles is not more than about 100% of the concentration of the colloidal silica particles.

2. The CMP composition of claim 1 further comprising a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide.

3. The CMP composition of claim 2 further comprising a primary complexing agent.

4. The CMP composition of claim 3 wherein the primary complexing agent comprises glycine.

5. The CMP composition of claim 3 wherein the primary complexing agent is present in the composition at a concentration in the range of about 0.3 to about 6 wt %.

6. The CMP composition of claim 3 further comprising a secondary complexing agent.

7. The CMP composition of claim 6 wherein the secondary complexing agent is selected from the group consisting of oxalic acid, citric acid, malonic acid, and a combination of two or more thereof.

8. The CMP composition of claim 6 wherein the secondary complexing agent comprises malonic acid.

9. The CMP composition of claim 6 wherein the secondary complexing agent comprises malonic acid and the metal ion comprises Fe³⁺.

10. The CMP composition of claim 6 wherein the secondary complexing agent is present in the composition at a concentration in the range of about 0.04 to about 2 wt %.

11. The CMP composition of claim 2 wherein the metal ion comprises at least one ion selected from the group consisting of Fe³⁺, Fe²⁺, CO²⁺, Cu²⁺, Eu³⁺, Mn²⁺, Re⁷⁺, W⁶⁺, Mo⁵⁺ and Ir³⁺.

12. The CMP composition of claim 2 wherein the metal ion comprises Fe³⁺.

13. The CMP composition of claim 1 wherein the composition has a pH in the range of about 0 to about 5.

14. The CMP composition of claim 1 wherein the colloidal silica is present in the CMP composition at a concentration of about 1 to about 10 wt %.

15. The CMP composition of claim 1 wherein the fused silica is present in the CMP composition at a concentration of about 0.3 to about 6 wt %.

16. The CMP composition of claim 1 wherein the colloidal silica and the fused silica are present in the CMP composition in a weight-to-weight ratio in the range of about 9:

1 to about 1;

1.

17. The CMP composition of claim 1 wherein the colloidal silica has an average particle size in the range of about 10 to about 300 nm.

18. The CMP composition of claim 1 wherein the fused silica has an average particle size in the range of about 20 to about 3000 nm.

19. The CMP composition of claim 1 wherein the composition is free from alumina particles.

27. A chemical mechanical polishing method for planarizing a NiP substrate, the method comprising abrading a surface of the substrate with a CMP composition of claim 1.

20. A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate, the composition comprising a suspension of about 1 to about 10 wt % colloidal silica particles and about 0.3 to about 6 wt % fused silica particles in an acidic aqueous carrier containing about 0.3 to about 1.8 wt % hydrogen peroxide;

about 50 to about 150 ppm of a metal ion selected from the group consisting of Fe³⁺, Fe²⁺, Co²⁺, Cu²⁺, Eu³⁺, Mn²⁺, Re⁷⁺, W⁶⁺, Mo⁵⁺ and Ir³⁺;

about 0.3 to about 6 wt % of a primary complexing agent; and

about 0.4 to about 2 wt % of a secondary complexing agent;

wherein the fused silica particles are present in at a concentration that is not more than about 100% of the concentration of the colloidal silica particles.

21. The CMP composition of claim 20 wherein the metal ion comprises Fe³⁺.

22. The CMP composition of claim 20 wherein the primary complexing agent comprises glycine.

23. The CMP composition of claim 20 wherein the secondary complexing agent is selected from the group consisting of oxalic acid, citric acid, malonic acid, and a combination of two or more thereof.

24. The CMP composition of claim 20 wherein the metal ion comprises Fe³⁺, the primary complexing agent comprises glycine and the secondary complexing agent comprises malonic acid.

25. The CMP composition of claim 20 wherein the colloidal silica has an average particle size in the range of about 10 to about 300 nm.

26. The CMP composition of claim 20 wherein the fused silica has an average particle size in the range of about 20 to about 3000 nm.

28. A chemical mechanical polishing method for planarizing a NiP substrate, the method comprising abrading a surface of the substrate with a CMP composition of claim 20.