VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD

• US 20160102401A1
• Filed: 10/07/2015
• Published: 04/14/2016
• Est. Priority Date: 10/09/2014
• Status: Abandoned Application

• Current Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Original Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Inventors: TAKAHASHI, Hideshi, SATO, Yuusuke
• Application Number:
  US14/877,040
• Publication Number:
  US 20160102401A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A vapor phase growth apparatus includes a reaction chamber, a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber, a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group III element to the reaction chamber, a second gas supply path connected to the second gas ejection hole and supplying a second process gas including a group V element to the reaction chamber, a first connection path connecting the first gas supply path and the second gas supply path, and a first control unit controlling the passage and stop of gas through the first connection path.

Claims

1. A vapor phase growth apparatus comprising:

a reaction chamber;

a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber;

a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group element to the reaction chamber;

a second gas supply path connected to the second gas ejection hole and supplying a second process gas including a group V element to the reaction chamber;

a first connection path connecting the first gas supply path and the second gas supply path; and

a first control unit controlling the passage and stop of gas through the first connection path.

2. The vapor phase growth apparatus according to claim 1, further comprising:

a third gas supply path connected to a third gas ejection hole of the shower plate and supplying a third process gas including hydrogen gas or inert gas to the reaction chamber.

3. The vapor phase growth apparatus according to claim 2, further comprising:

a second connection path connecting the first gas supply path and the third gas supply path;

a third connection path connecting the second gas supply path and the third gas supply path;

a second control unit controlling the passage and stop of gas through the second connection path; and

a third control unit controlling the passage and stop of gas through the third connection path.

4. The vapor phase growth apparatus according to claim 2, further comprising:

a second connection path connecting the first gas supply path and the third gas supply path and/or connecting the second gas supply path and the third gas supply path; and

a second control unit controlling the passage and stop of gas through the second connection path.

5. The vapor phase growth apparatus according to claim 3,

wherein a connection position between the second connection path and the first gas supply path is between the reaction chamber and a connection position between the first connection path and the first gas supply path,

a connection position between the third connection path and the second gas supply path is between the reaction chamber and a connection position between the first connection path and the second gas supply path, and

a connection position between the third connection path and the third gas supply path is between the reaction chamber and a connection position between the second connection path and the third gas supply path.

6. The vapor phase growth apparatus according to claim 2,

wherein a connection position between the first connection path and the first gas supply path is between the reaction chamber and a connection position between the second connection path and the first gas supply path,

a connection position between the first connection path and the second gas supply path is between the reaction chamber and a connection position between the third connection path and the second gas supply path, and

a connection position between the third connection path and the third gas supply path is between the reaction chamber and a connection position between the second connection path and the third gas supply path.

7. The vapor phase growth apparatus according to claim 1,

wherein the group III element is gallium (Ga), aluminum (Al), or indium (In) and the group V element is nitrogen (N).

8. The vapor phase growth apparatus according to claim 1,

wherein the first process gas includes trimethylgallium (TMG), trimethylaluminum (TMA), or trimethylindium (TMT) and the second process gas includes ammonia (NH₃).

9. A vapor phase growth apparatus comprising:

a reaction chamber;

a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber;

a first gas supply path connected to the first gas ejection hole and supplying a first process gas to the reaction chamber;

a second gas supply path connected to the second gas ejection hole and supplying a second process gas to the reaction chamber;

a first source gas supply path supplying a first source gas including a group III element to the first gas supply path or the second gas supply path;

a second source gas supply path supplying a second source gas including a group V element to the first gas supply path or the second gas supply path;

a first connection path connecting the first source gas supply path and the first gas supply path;

a second connection path connecting the first source gas supply path and the second gas supply path;

a third connection path connecting the second source gas supply path and the first gas supply path;

a fourth connection path connecting the second source gas supply path and the second gas supply path;

a first control unit controlling the passage and stop of gas through the first connection path;

a second control unit controlling the passage and stop of gas through the second connection path;

a third control unit controlling the passage and stop of gas through the third connection path; and

a fourth control unit controlling the passage and stop of gas through the fourth connection path.

10. The vapor phase growth apparatus according to claim 9, further comprising:

a third gas supply path connected to a third gas ejection hole of the shower plate and supplying a third process gas including hydrogen gas or inert gas to the reaction chamber.

11. The vapor phase growth apparatus according to claim 9,

wherein the group III element is gal gallium (Ga), aluminum (Al), or indium (In) and the group V element is nitrogen (N).

12. The vapor phase growth apparatus according to claim 9,

wherein the first process gas includes trimethylgallium (TMG), trimethylaluminum (TMA), or trimethylindium (TMI) and the second process gas includes ammonia (NH₃).

13. A vapor chase growth method comprising:

loading a substrate to a reaction chamber;

separately supplying gas including a group III element and gas including a group V element to the reaction chamber before the gases are introduced into the reaction chamber to form a first semiconductor film on the substrate; and

mixing the gas including the group III element and the gas including the group V element before the gases are introduced into the reaction chamber and supplying the mixed gas to the reaction chamber to form a second semiconductor film on the substrate, after forming the first semiconductor film without taking out the substrate from the reaction chamber.

14. The vapor phase growth method according to claim 13,

wherein the group III element is gallium (Ga), aluminum (Al), or indium (In) and the group V element is nitrogen (N).

15. The vapor phase growth method according claim 13,

wherein the gas including the group III element includes trimethylgallium (TMG) trimethylaluminum (TMA), or trimethylindium (TMI) and the gas including the group V element includes ammonia (NH₃).