VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
First Claim
1. A vapor phase growth apparatus comprising:
- a reaction chamber;
a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber;
a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group element to the reaction chamber;
a second gas supply path connected to the second gas ejection hole and supplying a second process gas including a group V element to the reaction chamber;
a first connection path connecting the first gas supply path and the second gas supply path; and
a first control unit controlling the passage and stop of gas through the first connection path.
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Accused Products
Abstract
A vapor phase growth apparatus includes a reaction chamber, a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber, a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group III element to the reaction chamber, a second gas supply path connected to the second gas ejection hole and supplying a second process gas including a group V element to the reaction chamber, a first connection path connecting the first gas supply path and the second gas supply path, and a first control unit controlling the passage and stop of gas through the first connection path.
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Citations
15 Claims
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1. A vapor phase growth apparatus comprising:
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a reaction chamber; a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber; a first gas supply path connected to the first gas ejection hole and supplying a first process gas including a group element to the reaction chamber; a second gas supply path connected to the second gas ejection hole and supplying a second process gas including a group V element to the reaction chamber; a first connection path connecting the first gas supply path and the second gas supply path; and a first control unit controlling the passage and stop of gas through the first connection path. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A vapor phase growth apparatus comprising:
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a reaction chamber; a shower plate provided at an upper part of the reaction chamber and having a first gas ejection hole and a second gas ejection hole formed in a surface thereof close to the reaction chamber; a first gas supply path connected to the first gas ejection hole and supplying a first process gas to the reaction chamber; a second gas supply path connected to the second gas ejection hole and supplying a second process gas to the reaction chamber; a first source gas supply path supplying a first source gas including a group III element to the first gas supply path or the second gas supply path; a second source gas supply path supplying a second source gas including a group V element to the first gas supply path or the second gas supply path; a first connection path connecting the first source gas supply path and the first gas supply path; a second connection path connecting the first source gas supply path and the second gas supply path; a third connection path connecting the second source gas supply path and the first gas supply path; a fourth connection path connecting the second source gas supply path and the second gas supply path; a first control unit controlling the passage and stop of gas through the first connection path; a second control unit controlling the passage and stop of gas through the second connection path; a third control unit controlling the passage and stop of gas through the third connection path; and a fourth control unit controlling the passage and stop of gas through the fourth connection path. - View Dependent Claims (10, 11, 12)
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13. A vapor chase growth method comprising:
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loading a substrate to a reaction chamber; separately supplying gas including a group III element and gas including a group V element to the reaction chamber before the gases are introduced into the reaction chamber to form a first semiconductor film on the substrate; and mixing the gas including the group III element and the gas including the group V element before the gases are introduced into the reaction chamber and supplying the mixed gas to the reaction chamber to form a second semiconductor film on the substrate, after forming the first semiconductor film without taking out the substrate from the reaction chamber. - View Dependent Claims (14, 15)
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Specification