METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON WAFER
First Claim
1. A manufacturing method of a single crystal using a single-crystal pull-up apparatus comprising a chamber, a crucible disposed in the chamber and adapted to receive a dopant-added melt in which red phosphorus is added to a silicon melt, and a pull-up portion that is configured to pull up a seed crystal after the seed crystal is brought into contact with the dopant-added melt, the method comprising:
- adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ
·
cm to 0.9 m∩
·
cm;
subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and
pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±
70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less.
1 Assignment
0 Petitions
Accused Products
Abstract
A manufacturing method of a single crystal uses a single-crystal pull-up apparatus includes: adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ·cm to 0.9 mΩ·cm; subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less.
-
Citations
8 Claims
-
1. A manufacturing method of a single crystal using a single-crystal pull-up apparatus comprising a chamber, a crucible disposed in the chamber and adapted to receive a dopant-added melt in which red phosphorus is added to a silicon melt, and a pull-up portion that is configured to pull up a seed crystal after the seed crystal is brought into contact with the dopant-added melt, the method comprising:
-
adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ
·
cm to 0.9 m∩
·
cm;subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±
70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less. - View Dependent Claims (2, 3, 4, 6)
-
-
5. A manufacturing method of a silicon wafer using a single crystal obtained using a single-crystal pull-up apparatus comprising a chamber, a crucible disposed in the chamber and adapted to receive a dopant-added melt in which red phosphorus is added to a silicon melt, and a pull-up portion that is configured to pull up a seed crystal after the seed crystal is brought into contact with the dopant-added melt, the method comprising:
-
adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ
·
cm to 0.9 mΩ
·
cm;pull-up the single crystal; and cutting the silicon wafer from a portion of the single crystal, a temperature of the portion being 570±
70 degrees C. for 20 to 200 minutes when the single crystal is pulled up.
-
-
7. A single crystal manufactured using a silicon melt added with red phosphorus so that a resistivity of the silicon melt is in a range from 0.7 m∩
- ·
cm to 0.9 m∩
·
cm, the single crystal comprising;a straight body comprising a crystal region in which the number of pits generated on a silicon wafer cut out from the single crystal is 0.1/cm2 or less after applying a heat treatment for heating the silicon wafer at 1200 degrees C. for 30 seconds in a hydrogen atmosphere. - View Dependent Claims (8)
- ·
Specification