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METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILICON WAFER

  • US 20160102418A1
  • Filed: 04/15/2014
  • Published: 04/14/2016
  • Est. Priority Date: 04/24/2013
  • Status: Active Grant
First Claim
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1. A manufacturing method of a single crystal using a single-crystal pull-up apparatus comprising a chamber, a crucible disposed in the chamber and adapted to receive a dopant-added melt in which red phosphorus is added to a silicon melt, and a pull-up portion that is configured to pull up a seed crystal after the seed crystal is brought into contact with the dopant-added melt, the method comprising:

  • adding the red phosphorus to the silicon melt so that a resistivity of the single crystal falls in a range from 0.7 mΩ

    ·

    cm to 0.9 m∩

    ·

    cm;

    subjecting an evaluation silicon wafer obtained from the single crystal to a heat treatment in which the evaluation silicon wafer is heated at 1200 degrees C. for 30 seconds in a hydrogen atmosphere; and

    pull-up the single crystal while appropriately controlling a period for a temperature of the single crystal to be in a range of 570±

    70 degrees C. so that the number of pits generated on the evaluation silicon wafer becomes 0.1/cm2 or less.

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