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Semiconductor Structure Having Integrated Snubber Resistance and Related Method

  • US 20160104773A1
  • Filed: 09/30/2015
  • Published: 04/14/2016
  • Est. Priority Date: 10/09/2014
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a source trench in a drift region, said source trench having a source trench dielectric liner and a source trench conductive filler surrounded by said source trench dielectric liner;

    a source region in a body region over said drift region;

    a patterned source trench dielectric cap forming an insulated portion and an exposed portion of said source trench conductive filler;

    a source contact layer coupling said source region to said exposed portion of said source trench conductive filler, said insulated portion of said source trench conductive filler increasing resistance between said source contact layer and said source trench conductive filler under said patterned source trench dielectric cap.

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