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INTEGRATED FLOATING DIODE STRUCTURE AND METHOD THEREFOR

  • US 20160104781A1
  • Filed: 10/13/2014
  • Published: 04/14/2016
  • Est. Priority Date: 10/13/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate of a first conductivity type;

    a first doped region of a second conductivity type opposite to the first conductivity type on the semiconductor substrate;

    a second doped region of the first conductivity type adjacent the first doped region;

    a cathode region of the second conductivity type within the second doped region;

    an anode region of the first conductivity type within the cathode region;

    a first electrode electrically coupled to the anode region; and

    a second electrode electrically coupled to the cathode region and the second doped region, wherein first doped region is configured as a floating region.

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