INTEGRATED FLOATING DIODE STRUCTURE AND METHOD THEREFOR
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
a first doped region of a second conductivity type opposite to the first conductivity type on the semiconductor substrate;
a second doped region of the first conductivity type adjacent the first doped region;
a cathode region of the second conductivity type within the second doped region;
an anode region of the first conductivity type within the cathode region;
a first electrode electrically coupled to the anode region; and
a second electrode electrically coupled to the cathode region and the second doped region, wherein first doped region is configured as a floating region.
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Abstract
In one embodiment, a floating diode structure includes a p-type semiconductor substrate. An n-type doped region is disposed between the semiconductor substrate and a p-type doped region of the first conductivity type adjacent the first doped region. An n-type cathode region is disposed within the p-type doped region and a p-type anode region is disposed within the cathode region. An anode electrode is connected to the anode region and a cathode electrode is connected to the cathode region. In one embodiment, the cathode electrode is further connected to the p-type doped region. The n-type doped region is configured as a floating region that facilitates the diode operating in both a forward and reverse bias mode and both below ground and above ground with respect to the p-type semiconductor substrate.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate of a first conductivity type; a first doped region of a second conductivity type opposite to the first conductivity type on the semiconductor substrate; a second doped region of the first conductivity type adjacent the first doped region; a cathode region of the second conductivity type within the second doped region; an anode region of the first conductivity type within the cathode region; a first electrode electrically coupled to the anode region; and a second electrode electrically coupled to the cathode region and the second doped region, wherein first doped region is configured as a floating region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor diode structure comprising:
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a semiconductor substrate of a first conductivity type; a first doped region of a second conductivity type opposite to the first conductivity type, the first doped region having a first portion adjacent the semiconductor substrate and having a first doping concentration and a second portion adjacent the first portion and having a second doping concentration greater than the first doping concentration; a second doped region of the first conductivity type adjacent the second portion of the first doped region; a cathode region of the second conductivity type within the second doped region; an anode region of the first conductivity type within the cathode region, wherein the cathode region and anode region form the semiconductor diode; a first electrode electrically coupled to the anode region; and a second electrode electrically coupled to the cathode region, wherein the first doped region is configured to operate absent a low-ohmic external voltage imposed on the first doped region, and wherein the second doping concentration is selected to reduce current injection from the semiconductor diode into the semiconductor substrate. - View Dependent Claims (12, 13, 14, 15)
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16. A method of forming a semiconductor device comprising:
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providing a semiconductor substrate of a first conductivity type, a first doped region of a second conductivity type opposite to the first conductivity type on the semiconductor substrate, and a second doped region of the first conductivity type adjacent the first doped region; forming a cathode region of the second conductivity type within the second doped region; forming an anode region of the first conductivity type within the cathode region; forming a first electrode coupled to the anode region; and forming a second electrode coupled to the cathode region and the second doped region, wherein first doped region is configured as a floating region. - View Dependent Claims (17, 18, 19, 20)
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Specification