METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP

• US 20160104819A1
• Filed: 05/14/2014
• Published: 04/14/2016
• Est. Priority Date: 05/16/2013
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: SCHMID, Christian, FLOETER, Richard, GROSSER, Julia, BROELL, Markus
• Granted Patent: US 9,799,801 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A method for producing an optoelectronic semiconductor chip comprises the following steps: providing a substrate, depositing a sacrificial layer, depositing a functional semiconductor layer sequence, laterally patterning the functional semiconductor layer sequence, and oxidizing the sacrificial layer in a wet thermal oxidation process.

Claims

1. Method for producing an optoelectronic semiconductor chip having the following steps:

providing a substrate;

depositing a sacrificial layer;

depositing a functional semiconductor layer sequence;

laterally patterning the functional semiconductor layer sequence;

oxidizing the sacrificial layer in a wet thermal oxidation process.

2. Method according to claim 1,

wherein

the substrate comprises GaAs or consists of GaAs,

the sacrificial layer comprises Al_xGa_1-xAs or consists thereof, wherein the ratio of aluminum to gallium is greater than 80 to 20, preferably greater than 93 to 7, and

AlO_xH_y is formed during oxidation of the sacrificial layer.

3. Method according to claim 1,

wherein the sacrificial layer comprises AlAs or consists thereof.

4. Method according to claim 1,

wherein the sacrificial layer comprises Al_xGa_1-xAs or consists thereof, wherein the ratio of aluminum to gallium is greater than 80 to 20, preferably greater than 93 to 7.

5. Method according to claim 1,

wherein AlO_xH_y is formed during oxidation of the sacrificial layer.

6. Method according to claim 1,

wherein the following further step is carried out after oxidation of the sacrificial layer:

separation of the functional semiconductor layer sequence from the substrate.

7. Method according to claim 6,

wherein the separation of the functional semiconductor layer sequence from the substrate comprises removal by means of an etching solution of an oxide formed during oxidation of the sacrificial layer (120).

8. Method according to claim 6,

wherein an etching solution is used which comprises hydrofluoric acid.

9. Method according to claim 6,

wherein a shear force is exerted on the functional semiconductor layer sequence during the separation of the functional semiconductor layer sequence from the substrate.

10. Method according to claim 6,

wherein the substrate is reused.

11. Method according to claim 1,

wherein a separation of the functional semiconductor layer sequence from the substrate does not involve etching and proceeds solely mechanically.

12. Method according to claim 1,

wherein the lateral patterning comprises the formation of trenches in the functional semiconductor layer sequence.

13. Method according to claim 1,

wherein the following further step is carried out:

bonding of the functional semiconductor layer sequence to a carrier.

14. Method according to claim 13,

wherein the bonding of the functional semiconductor layer sequence to the carrier takes place prior to oxidation of the sacrificial layer.

15. Method according to claim 13,

wherein the bonding of the functional semiconductor layer sequence to the carrier takes place after oxidation of the sacrificial layer.

16. Method according to claim 13,

wherein the carrier comprises silicon or germanium.

17. Method according to claim 1,

wherein the substrate comprises GaAs or consists of GaAs.

18. Method for producing an optoelectronic semiconductor chip having the following steps:

providing a substrate;

depositing a sacrificial layer;

depositing a functional semiconductor layer sequence;

laterally patterning the functional semiconductor layer sequence;

oxidizing the sacrificial layer in a wet thermal oxidation process, wherein

the substrate comprises GaAs or consists of GaAs,

the sacrificial layer comprises Al_xGa_1-xAs or consists thereof, wherein the ratio of aluminum to gallium is greater than 80 to 20, preferably greater than 93 to 7, and

AlO_xH_y is formed during oxidation of the sacrificial layer.

19. Method according to claim 18,

wherein a shear force is exerted on the functional semiconductor layer sequence during a separation of the functional semiconductor layer sequence from the substrate.

20. Method according to claim 19,

wherein the separation of the functional semiconductor layer sequence from the substrate does not involve etching and proceeds solely mechanically.