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DATA WRITING METHOD, MEMOEY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS

  • US 20160110112A1
  • Filed: 12/09/2014
  • Published: 04/21/2016
  • Est. Priority Date: 10/20/2014
  • Status: Abandoned Application
First Claim
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1. A data writing method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and each of the physical erasing units has a plurality of physical programming units, the data writing method comprising:

  • identifying whether data belongs to a first pattern or a second pattern;

    if the data belongs to the first pattern, using a first compression/decompression circuit to compress the data to generate compressed data and writing the compressed data into the physical programming units; and

    if the data belongs to the second pattern, using a second compression/decompression circuit to compress the data to generate another compressed data and writing the another compressed data into the physical programming units,wherein a compression speed of the first compression/decompression circuit is higher than a compression speed of the second compression/decompression circuit, and a data compression rate of the first compression/decompression circuit is lower than a data compression rate of the second compression/decompression circuit.

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