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METHOD OF FORMING AMORPHOUS CARBON MONOLAYER AND ELECTRONIC DEVICE INCLUDING AMORPHOUS CARBON MONOLAYER

  • US 20160111180A1
  • Filed: 05/18/2015
  • Published: 04/21/2016
  • Est. Priority Date: 10/16/2014
  • Status: Active Grant
First Claim
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1. A method of forming an amorphous carbon monolayer (ACM), the method comprising forming the ACM on a surface of a germanium (Ge) substrate via chemical vapor deposition (CVD) process,wherein the CVD process comprises injecting a reaction gas comprising carbon-containing gas and hydrogen (H2) gas into a reaction chamber containing the Ge substrate, andwherein a partial pressure of the H2 gas in the reaction chamber is in the range of from 1 Torr to 30 Torr.

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