AMINO(IODO)SILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS AND METHODS OF USING THE SAME
First Claim
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1. A method of depositing a sacrificial Silicon nitride layer on a substrate, the method comprising:
- introducing a vapor of SiH2I(N(iPr)2) and/or SiH2I(N(iBu)2) into a reactor having a substrate disposed therein;
depositing at least part of SiH2I(N(iPr)2) and/or SiH2I(N(iBu)2) onto the substrate to form the sacrificial silicon nitride layer using a vapor deposition method.
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Abstract
Disclosed are amino(iodo)silane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed amino(iodo)silane precursors include SiH2I(N(iPr)2) or SiH2I(N(iBu)2).
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8 Claims
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1. A method of depositing a sacrificial Silicon nitride layer on a substrate, the method comprising:
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introducing a vapor of SiH2I(N(iPr)2) and/or SiH2I(N(iBu)2) into a reactor having a substrate disposed therein; depositing at least part of SiH2I(N(iPr)2) and/or SiH2I(N(iBu)2) onto the substrate to form the sacrificial silicon nitride layer using a vapor deposition method. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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