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AMINO(IODO)SILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS AND METHODS OF USING THE SAME

  • US 20160115593A1
  • Filed: 12/30/2015
  • Published: 04/28/2016
  • Est. Priority Date: 12/30/2015
  • Status: Active Grant
First Claim
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1. A method of depositing a sacrificial Silicon nitride layer on a substrate, the method comprising:

  • introducing a vapor of SiH2I(N(iPr)2) and/or SiH2I(N(iBu)2) into a reactor having a substrate disposed therein;

    depositing at least part of SiH2I(N(iPr)2) and/or SiH2I(N(iBu)2) onto the substrate to form the sacrificial silicon nitride layer using a vapor deposition method.

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