NONVOLATILE STORAGE REFLOW DETECTION

• US 20160118112A1
• Filed: 10/24/2014
• Published: 04/28/2016
• Est. Priority Date: 10/24/2014
• Status: Active Grant

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: Sandisk Technologies Incorporated (Western Digital Corporation)
• Inventors: Liang, Guirong, Chen, Changyuan, Higashitani, Masaaki
• Granted Patent: US 9,472,270 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G06F 11/0727 in a storage system, e.g. in a DASD or network based storage system drivers for digital recording or reproducing units G06F3/06; circuits for error detection or correction within digital recording or reproducing units G11B20/18; for distributed storage of data in networks, e.g. transport arrangements for network file system [NFS], storage area networks [SAN] or network attached storage [NAS], H04L67/1097
• CPC Class Codes: G06F 11/076 by exceeding a count or rate limit, e.g. word- or bit count limit
• CPC Class Codes: G06F 11/079 Root cause analysis, i.e. error or fault diagnosis in a hardware test environment G06F11/22; in a software test environment G06F11/36
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 29/42 using error correcting codes [ECC] or parity check
• CPC Class Codes: G11C 29/44 Indication or identification of errors, e.g. for repair
• CPC Class Codes: G11C 29/52 Protection of memory contents; Detection of errors in memory contents

Abstract

A non-volatile storage system includes non-volatile storage elements and one or more managing circuits in communication with the non-volatile storage elements. The non-volatile storage elements are arranged in blocks including a first block reserved for system use and a second block. The first block stores a pre-determined data pattern that was written to the first block subsequent to system testing and prior to completion of manufacturing of the non-volatile storage system. Subsequent to completion of manufacturing of the non-volatile storage system, the one or more managing circuits sense information stored in the first block and determine an error metric for the sensed information with respect to the pre-determined data pattern. The one or more managing circuits determine that the system experienced an IR reflow process if the error metric was determined to satisfy the threshold.

Claims

1. A method for operating a non-volatile storage system, comprising:

identifying a first block storing first data, the first data is already known without having to read from the first block;

sensing information for non-volatile storage elements connected to one or more word lines in the identified first block, the non-volatile storage elements connected to one or more word lines store at least a portion of the first data;

determining an error metric for the sensed information;

determining whether the error metric satisfies a threshold; and

identifying that a second block has been subjected to a reflow process if the error metric satisfies the threshold, the second block does not store the first data, the second block stores preloaded data.

2. The method of claim 1, further comprising:

operating the second block differently than blocks not storing preloaded data if the number of errors satisfies a threshold in response to identifying that the second block has been subjected to the reflow process.

3. The method of claim 1, wherein:

the first block is reserved for system use and is not available for storing user data.

4. The method of claim 3, further comprising:

temporarily unmarking the first block as a reserved block prior to the sensing information.

5. The method of claim 1, wherein:

the first block is a sacrificed block used for system testing and is not available for storing user data.

6. The method of claim 1, wherein:

the first data was written to the first block subsequent to system testing and prior to completion of manufacturing of the non-volatile storage system.

7. The method of claim 1, further comprising:

programming the first data to the first block subsequent to system testing and prior to completion of manufacturing of the non-volatile storage system.

8. The method of claim 7, wherein:

the non-volatile storage elements connected to the one or more word lines store multiple bits of data per non-volatile storage element in a plurality of data states; and

the programming the first data to the first block comprises programming the non-volatile storage elements connected to the one or more word lines to a middle data state.

9. The method of claim 7, further comprising:

temporarily unmarking the first block as a reserved block prior to the programming of the first data to the first block, the first block is reserved for system use and is not available for storing user data; and

temporarily unmarking the first block as a reserved block prior to the sensing information.

10. The method of claim 1, wherein:

the sensing includes sensing threshold voltage information from a middle word line.

11. The method of claim 1, wherein:

the determining the error metric for the sensed information includes determining a bit error rate.

12. The method of claim 1, wherein:

the determining the error metric for the sensed information includes determining a number of bits that do not match the first data that is already known.

13. The method of claim 1, wherein:

the second block includes a first set of word lines connected to non-volatile storage elements that are programmed with the preloaded data and a second set of word lines connected to non-volatile storage elements that are not programmed; and

the method further comprises preventing the non-volatile storage elements connected to the second set of word lines from being programmed in response to identifying that the second block has been subjected to the reflow process.

14. A non-volatile storage system, comprising:

a plurality of non-volatile storage elements arranged in blocks including a first block and a second block, the first block is reserved for system use and is not available for storing user data, the first block stores a pre-determined data pattern written to the first block subsequent to system testing and prior to completion of manufacturing of the non-volatile storage system, the second block stores second data; and

one or more managing circuits in communication with the plurality of non-volatile storage elements, subsequent to completion of manufacturing of the non-volatile storage system the one or more managing circuits are configured to sense information stored in the first block and determine an error metric for the sensed information with respect to the pre-determined data pattern, one or more managing circuits are configured to operate the second block differently than otherwise if the error metric satisfies a threshold.

15. The non-volatile storage system of claim 14, wherein:

the non-volatile storage system comprises a plurality of non-volatile storage elements that store multiple bits of data per non-volatile storage element in a plurality of data states; and

the one or more managing circuits are configured to program the pre-determined data pattern to the first block by programming non-volatile storage elements to a middle data state.

16. The non-volatile storage system of claim 14, wherein:

the second block includes a first set of word lines connected to non-volatile storage elements that are programmed with preloaded data and a second set of word lines connected to non-volatile storage elements that are not programmed; and

the one or more managing circuits are configured to operate the second block differently by preventing the non-volatile storage elements connected to the second set of word lines from being programmed.

17. The non-volatile storage system of claim 14, wherein:

the one or more managing circuits are configured to use the first block for testing during a die sort process; and

the one or more managing circuits are configured to unmark the first block as a reserved block prior to the sensing information stored in the first block.

18. A method for operating a non-volatile storage system, comprising:

identifying a sacrificed block that has been used for system testing, the sacrificed block is storing a known data pattern;

sensing information for non-volatile storage elements connected to a word line in the sacrificed block;

determining a number of errors for the sensed information; and

operating a block storing preloaded data differently than blocks not storing preloaded data if the number of errors satisfies a threshold.

19. The method of claim 18, wherein:

the known data pattern was written to the sacrificed block subsequent to system testing and prior to completion of manufacturing of the non-volatile storage system.

20. The method of claim 18, further comprising:

programming the known data pattern to the sacrificed block subsequent to system testing and prior to completion of manufacturing of the non-volatile storage system.

21. The method of claim 20, wherein:

the non-volatile storage elements connected to the word line store multiple bits of data per non-volatile storage element in a plurality of data states; and

the programming the known data pattern to the sacrificed block comprises programming the non-volatile storage elements connected to the word line to a particular middle data state, the word line is a middle word line.

22. The method of claim 20, further comprising:

temporarily unmarking the sacrificed block as a reserved block prior to the programming the known data pattern to the sacrificed block; and

temporarily unmarking the sacrificed block as a reserved block prior to the sensing information.

23. The method of claim 18, wherein:

the block storing preloaded data includes a first set of word lines connected to non-volatile storage elements that are programmed with the preloaded data and a second set of word lines connected to non-volatile storage elements that are not programmed; and

the operating the block storing preloaded data differently comprises preventing the non-volatile storage elements connected to the second set of word lines from being programmed if the number of errors satisfies a threshold.

24. One or more processor readable storage devices storing processor readable code for programming one or more processors to perform a method comprising:

identifying a first block that has been sacrificed for system use, the first block is storing data that is already known without having to read from the first block, the first block is part of a non-volatile storage system;

sensing information for a word line in the identified first block, the word line is connected to non-volatile storage element storing at least a portion of the data that is already known;

determining a number of errors for the sensed information;

determining whether the number of errors is greater than a threshold; and

operating a block storing preloaded data differently than blocks not storing preloaded data if the number of errors for the sensed information satisfies a threshold.

25. The method of claim 24, wherein:

the known data pattern was written to the sacrificed block subsequent to system testing and prior to completion of manufacturing of the non-volatile storage system.

26. The method of claim 24, wherein:

the non-volatile storage elements connected to the word line each store multiple bits of data per non-volatile storage element in a plurality of data states;

the word line is a middle word line; and

the sensing includes sensing whether the non-volatile storage elements connected to the word line are storing data in a particular middle data state.

27. A method for operating a non-volatile storage system, the non-volatile storage system includes a memory structure, the memory structure includes plurality of non-volatile storage elements arranged in blocks, the method comprising:

identifying a first block storing first data, the first data is already known without having to read from the first block;

sensing information for non-volatile storage elements connected to one or more word lines in the identified first block, the non-volatile storage elements connected to one or more word lines store at least a portion of the first data;

determining an error metric for the sensed information;

determining whether the error metric satisfies a threshold; and

determining that the memory structure has experienced an IR reflow process based on whether the error metric satisfies the threshold.