SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
First Claim
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1. A semiconductor device comprising:
- a gate electrode disposed on a substrate;
a gate insulation layer disposed on the substrate to cover the gate electrode;
an active layer disposed on the gate insulation layer, the active layer comprising an oxide semiconductor;
an insulating interlayer disposed on the gate insulation layer and configured to cover the active layer;
a protection structure disposed on the insulating interlayer, the protection structure comprising a plurality of metal oxide layers; and
a source electrode and a drain electrode disposed on the protection structure, the source electrode and the drain electrode contacting a source region and a drain region of the active layer, respectively.
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Abstract
A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a gate electrode disposed on a substrate; a gate insulation layer disposed on the substrate to cover the gate electrode; an active layer disposed on the gate insulation layer, the active layer comprising an oxide semiconductor; an insulating interlayer disposed on the gate insulation layer and configured to cover the active layer; a protection structure disposed on the insulating interlayer, the protection structure comprising a plurality of metal oxide layers; and a source electrode and a drain electrode disposed on the protection structure, the source electrode and the drain electrode contacting a source region and a drain region of the active layer, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 19)
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9. A semiconductor device comprising:
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a gate electrode disposed on a substrate; a gate insulation layer disposed on the substrate and configured to cover the gate electrode; an active layer disposed on the gate insulation layer, the active layer comprising an oxide semiconductor; a first insulating interlayer disposed on the gate insulation layer and configured to cover the active layer; a source electrode and a drain electrode disposed on the first insulating interlayer, the source electrode and the drain electrode contacting a source region and a drain region of the active layer, respectively; a second insulating interlayer disposed on the first insulating interlayer, the source electrode, and the drain electrode; and a protection structure disposed on the second insulating interlayer, the protection structure comprising a plurality of metal oxide layers. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor device, comprising:
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forming a gate electrode on a substrate; forming a gate insulation layer on the substrate to cover the gate electrode; forming an active layer comprising an oxide semiconductor on the gate insulation layer; forming an insulating interlayer on the active layer to cover the gate insulation layer; forming a protection structure comprising a plurality of metal oxide layers on the insulating interlayer; and forming a source electrode and a drain electrode on the protection structure, the source electrode and the drain electrode contacting a source region and a drain region of the active layer, respectively. - View Dependent Claims (16, 17, 18)
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20. A method of manufacturing a semiconductor device, comprising:
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forming a gate electrode on a substrate; forming a gate insulation layer on the substrate to cover the gate electrode; forming an active layer comprising an oxide semiconductor on the gate insulation layer; forming a first insulating interlayer on the active layer to cover the gate insulation layer; forming a source electrode and a drain electrode on the first insulating interlayer, the source electrode and the drain electrode contacting a source region and a drain region of the active layer, respectively; forming a second first insulating interlayer on the first insulating interlayer, the source electrode and the drain electrode; and forming a protection structure comprising a plurality of metal oxide layers on the second insulating interlayer.
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Specification