LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD

• US 20160118564A1
• Filed: 12/30/2015
• Published: 04/28/2016
• Est. Priority Date: 11/18/2010
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Ye Seul, Kim, Kyoung Wan, Yoon, Yeo Jin, Oh, Sang Hyun, Lee, Keum Ju, Lee, Jin Woong, Jeong, Da Yeon, Woo, Sang Won
• Granted Patent: US 9,520,536 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Claims

1. A light emitting diode device comprising:

a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer located over the first conductive-type semiconductor layer, and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer;

a transparent conductive layer formed over the second conductive-type semiconductor layer;

a second electrode pad formed over the transparent conductive layer;

a second electrode extension extending from the second electrode pad; and

a current blocking layer interposed between the transparent conductive layer and the second conductive-type semiconductor layer,

wherein the transparent conductive layer has an opening exposing at least a portion of the current blocking layer, and the second electrode extension includes a first portion electrically connected to the transparent conductive layer and a second portion electrically insulated from the transparent conductive layer.

2. The light emitting diode device of claim 1, wherein the transparent conductive layer has one or more additional openings that are formed along the second electrode extension and spaced apart from one another.

3. The light emitting diode device of claim 1, wherein the first portion of the second electrode extension is located on the transparent current blocking layer, and the second portion of the second electrode extension is located on the current blocking layer exposed through the opening of the transparent conductive layer.

4. The light emitting diode device of claim 1, wherein the hole has a width smaller than that of the current blocking layer.

5. The light emitting diode of claim 1, further comprising a protective insulation layer covering the transparent conductive layer.

6. The light emitting diode of claim 1, further comprising:

a first electrode pad formed on the second conductive-type semiconductor layer so as to be opposite to the first conductive-type semiconductor layer; and

a first electrode extension extending from the first electrode pad.

7. The light emitting diode of claim 1, wherein the light emitting structure has a groove penetrating through the second conductive-type semiconductor layer and the active layer to expose the first conductive-type semiconductor layer, and

the first electrode extension is connected to the first conductive-type semiconductor layer through the groove.

8. The light emitting diode of claim 7, wherein the light emitting structure has one or more additional grooves that are arranged along the first electrode extension.

9. The light emitting diode of claim 6, wherein the first electrode extension and the second electrode extension are disposed in parallel with each other, and

the opening and the groove are disposed on different horizontal lines from each other.

10. The light emitting diode device of claim 7, wherein the opening is formed to have a length not overlapped with the groove.

11. The light emitting diode device of claim 6, wherein the first electrode extension is formed along an edge of the light emitting diode device.

12. The light emitting diode device of claim 1, wherein the transparent conductive layer includes a metal oxide.

13. A light emitting diode device comprising:

is a substrate having first and second edge that oppose to each other;

a light emitting structure including a first conductive-type semiconductor layer formed over the substrate, a second conductive-type semiconductor layer formed over the first conductive-type semiconductor layer; and

an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer;

a first electrode pad formed over the light emitting structure around the first edge of the substrate;

a first electrode extension extending from the first electrode pad;

a second electrode pad formed over the light emitting structure around the second edge of the substrate; and

a second electrode extension extending from the second electrode pad,

wherein along the first electrode extension, first openings are located spaced apart from one another to connect the first electrode extension to the first conductive-type semiconductor layer, and

along the second electrode extension, second openings are located spaced apart from one another to cause a current block in the openings and a current crowd between the openings.

14. The light emitting diode device of claim 13, wherein the substrate includes a sapphire substrate.

15. The light emitting diode device of claim 13, wherein the first openings penetrate through the active layer and the second conductive-type semiconductor layer.

16. The light emitting diode device of claim 13, further comprising a transparent conductive layer located over the second conductivity-type semiconductor layer and having a first portion electrically connected to the second electrode extension and a second portion electrically insulated from the second electrode extension.

17. The light emitting diode device of claim 13, further comprising a current blocking layer located between the second conductivity-type semiconductor layer and the second electrode extension.

18. The light emitting diode device of claim 13, further comprising a protective insulation layer covering the transparent conductive layer.

19. The light emitting diode device of claim 13, wherein the first openings and the second openings are positioned on different horizontal lines from each other.

20. The light emitting diode device of claim 13, wherein the second openings have a width greater than that of the second electrode extension.