METHOD OF MAKING A SEMICONDUCTOR DEVICE HAVING A FUNCTIONAL CAPPING
First Claim
1. Capping substrate for a semiconductor device, comprising a passive integrated component which is an inductance, and comprises a winding comprising a combination of a plurality via structures (11), arranged in arrays and extending through the substrate, and metal strips (12) which connects the via structures pair-wise, wherein a via on the upper surface of the substrate is coupled to an opposing via and wherein said opposing via on the bottom surface of the substrate is interconnected with an adjacent via of the first mentioned via, such that there is an essentially in a zig-zag formation extending coupling between vias, whereby a spiral wound conductor is present.
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Accused Products
Abstract
A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer. Finally the wafer is singulated to individual devices.
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Citations
10 Claims
- 1. Capping substrate for a semiconductor device, comprising a passive integrated component which is an inductance, and comprises a winding comprising a combination of a plurality via structures (11), arranged in arrays and extending through the substrate, and metal strips (12) which connects the via structures pair-wise, wherein a via on the upper surface of the substrate is coupled to an opposing via and wherein said opposing via on the bottom surface of the substrate is interconnected with an adjacent via of the first mentioned via, such that there is an essentially in a zig-zag formation extending coupling between vias, whereby a spiral wound conductor is present.
Specification