×

METHOD OF MAKING A SEMICONDUCTOR DEVICE HAVING A FUNCTIONAL CAPPING

  • US 20160122180A1
  • Filed: 01/12/2016
  • Published: 05/05/2016
  • Est. Priority Date: 11/19/2008
  • Status: Active Grant
First Claim
Patent Images

1. Capping substrate for a semiconductor device, comprising a passive integrated component which is an inductance, and comprises a winding comprising a combination of a plurality via structures (11), arranged in arrays and extending through the substrate, and metal strips (12) which connects the via structures pair-wise, wherein a via on the upper surface of the substrate is coupled to an opposing via and wherein said opposing via on the bottom surface of the substrate is interconnected with an adjacent via of the first mentioned via, such that there is an essentially in a zig-zag formation extending coupling between vias, whereby a spiral wound conductor is present.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×