Edge Damage Inspection
First Claim
1. A power semiconductor device, comprising:
- a semiconductor body comprising an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region, the active semiconductor region having an active surface area and the perimeter semiconductor region having a perimeter surface area; and
a test structure for contactless testing of the perimeter semiconductor region, the test structure comprising an electrically conductive path mounted on the perimeter surface area, wherein the test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field.
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Accused Products
Abstract
A power semiconductor device includes a semiconductor body. The semiconductor body includes an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region. The active semiconductor region has an active surface area, and the perimeter semiconductor region has a perimeter surface area. The power semiconductor device further includes a test structure for contactless testing of the perimeter semiconductor region. The test structure includes an electrically conductive path mounted on the perimeter surface area. The test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field.
25 Citations
20 Claims
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1. A power semiconductor device, comprising:
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a semiconductor body comprising an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region, the active semiconductor region having an active surface area and the perimeter semiconductor region having a perimeter surface area; and a test structure for contactless testing of the perimeter semiconductor region, the test structure comprising an electrically conductive path mounted on the perimeter surface area, wherein the test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of manufacturing a power semiconductor device, the method comprising:
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producing a semiconductor body that comprises an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region, the active semiconductor region having an active surface area and the perimeter semiconductor region having a perimeter surface area; on the active surface area, generating a front side metallization comprising a front side metallization material; and on the perimeter surface area, producing a test structure for contactless testing of the perimeter semiconductor region, such that the test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field, wherein producing the test structure includes generating an electrically conductive path on the perimeter surface area, the electrically conductive path comprising the same front side metallization material as the front side metallization. - View Dependent Claims (19, 20)
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Specification