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SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION STRUCTURE, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SUPER JUNCTION STRUCTURE

  • US 20160126307A1
  • Filed: 12/30/2014
  • Published: 05/05/2016
  • Est. Priority Date: 11/04/2014
  • Status: Abandoned Application
First Claim
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1. A semiconductor device having a super junction structure, comprising:

  • a substrate;

    an epitaxial layer of a first conductivity type on the substrate;

    a plurality of pillars of a second conductivity type in the epitaxial layer, wherein the second conductivity type is opposite to the first conductivity type;

    a plurality of gate trenches individually correspond to and over the pillars;

    an insulating layer in the gate trenches; and

    a plurality of doped wells of the second conductivity type in the epitaxial layer, wherein each of the doped wells is between two adjacent gate trenches.

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