SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION STRUCTURE, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SUPER JUNCTION STRUCTURE
First Claim
1. A semiconductor device having a super junction structure, comprising:
- a substrate;
an epitaxial layer of a first conductivity type on the substrate;
a plurality of pillars of a second conductivity type in the epitaxial layer, wherein the second conductivity type is opposite to the first conductivity type;
a plurality of gate trenches individually correspond to and over the pillars;
an insulating layer in the gate trenches; and
a plurality of doped wells of the second conductivity type in the epitaxial layer, wherein each of the doped wells is between two adjacent gate trenches.
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Abstract
A semiconductor device having a super junction structure includes a substrate, an epitaxial layer of a first conductivity type, a plurality of pillars of a second conductivity type, a plurality of gate trenches, an insulating layer and a plurality of doped wells of the second conductivity type. The epitaxial layer of the first conductivity type is on the substrate. The pillars of the second conductivity type are in the epitaxial layer, in which the second conductivity type is opposite to the first conductivity type. The gate trenches are individually corresponding to and over the pillars. The insulating layer is in the gate trenches. The doped wells of the second conductivity type are in the epitaxial layer, in which each of the doped wells is between two adjacent gate trenches. A method for manufacturing the semiconductor device and a method for manufacturing a super junction structure are also provided.
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Citations
20 Claims
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1. A semiconductor device having a super junction structure, comprising:
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a substrate; an epitaxial layer of a first conductivity type on the substrate; a plurality of pillars of a second conductivity type in the epitaxial layer, wherein the second conductivity type is opposite to the first conductivity type; a plurality of gate trenches individually correspond to and over the pillars; an insulating layer in the gate trenches; and a plurality of doped wells of the second conductivity type in the epitaxial layer, wherein each of the doped wells is between two adjacent gate trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device having a super junction structure, comprising:
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forming an epitaxial layer on a substrate, wherein the epitaxial layer is a first conductivity type; forming a doped layer in the epitaxial layer, wherein the doped layer is a second conductivity type opposite to the first conductivity type; forming a plurality of gate trenches in the doped layer and the epitaxial layer; forming a plurality of pillars in the epitaxial layer and individually correspond to and under the gate trenches; and filling an insulating material in the gate trenches. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a super junction structure, comprising:
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forming a plurality of trenches in a substrate of a first conductivity type; forming a doped region of a second conductivity type in the substrate and surrounding the trenches, wherein the second conductivity type is opposite to the first conductivity type; filling an undoped material in the trenches; and forming a pillar of the second conductivity type from the undoped material in the trenches. - View Dependent Claims (17, 18, 19, 20)
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Specification