LIGHT EMITTING DEVICE AND LIGHTING SYSTEM

• US 20160126413A1
• Filed: 11/02/2015
• Published: 05/05/2016
• Est. Priority Date: 11/03/2014
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KIM, Sung Kyoon, NA, Min Gyu, KIM, Myeong Soo
• Granted Patent: US 9,525,109 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a contact layer on the second conductive semiconductor layer; an insulating layer on the contact layer; a first branch electrode electrically connected to the first conductive semiconductor layer; a plurality of first via electrodes connected to the first branch electrode and electrically connected to the first conductive semiconductor layer by passing through the insulating layer; a first pad electrode electrically connected to the first branch electrode; a second pad electrode contacts the contact layer by passing through the insulating layer; a second branch electrode connected to the second pad electrode and disposed on the insulating layer; and a plurality of second via electrodes provided throughprovided through the insulating layer to electrically connect the second branch electrode to the contact layer.

Claims

1. A light emitting device comprising:

a substrate;

a first conductive semiconductor layer on the substrate;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

an contact layer on the second conductive semiconductor layer;

an insulating layer on the contact layer;

a first branch electrode electrically connected to the first conductive semiconductor layer;

a plurality of first via electrodes connected to the first branch electrode and electrically connected to the first conductive semiconductor layer by passing through the insulating layer;

a first pad electrode electrically connected to the first branch electrode;

a second pad electrode contacts the contact layer by passing through the insulating layer;

a second branch electrode connected to the second pad electrode and disposed on the insulating layer; and

a plurality of second via electrodes provided through the insulating layer to electrically connect the second branch electrode to the contact layer.

2. The light emitting device of claim 1, wherein one of the first via electrodes has a first horizontal width longer than a first distance between the first via electrodes.

3. The light emitting device of claim 2, wherein the first horizontal width of one of the first via electrodes is 2.5 times or more of the first distance between the first via electrodes.

4. The light emitting device of claim 2, wherein the first horizontal width is in a range of about 50 μ

m to 70 μ

m.

5. The light emitting device of claim 2, wherein the first distance is in a range of about 15 μ

m to 25 μ

m.

6. The light emitting device of claim 1, wherein one of the first via electrodes contacts the first conductive semiconductor layer has a second thickness thicker than a first thickness of the first branch electrode when viewed from a top.

7. The light emitting device of claim 1, further comprising a first reflective branch electrode under the first branch electrode.

8. The light emitting device of claim 1, further comprising a contact branch electrode between the first via electrode and the first conductive semiconductor layer.

9. The light emitting device of claim 1, further comprising a second reflective branch electrode under the second branch electrode.

10. The light emitting device of claim 1, further comprising a third reflective via electrode between the second via electrode and the contact layer.

11. The light emitting device of claim 10, wherein the third reflective via electrode surrounds a side surface of the second via electrode.

12. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;

a first branch electrode electrically connected to the first conductive semiconductor layer;

a plurality of third via electrodes connected to the first branch electrode and electrically connected to the first conductive semiconductor layer by passing through a predetermined insulating layer;

a second branch electrode electrically connected to the second conductive semiconductor layer while interposing a contact layer between the second branch electrode and the second conductive semiconductor layer; and

a plurality of second via electrodes disposed between the second branch electrode and the contact layer while passing through the insulating layer,

wherein one of the third via electrodes electrically connected to the first conductive semiconductor layer has a third horizontal width wider than a second horizontal width of the second via electrode disposed on the contact layer.

13. The light emitting device of claim 12, wherein the third horizontal width of one of the third via electrodes electrically connected to the first conductive semiconductor layer is three times or more of a third distance between the third via electrodes.

14. The light emitting device of claim 13, wherein the third distance is 100 μ

m or more.

15. The light emitting device of claim 12, further comprising a first reflective branch electrode under the first branch electrode.

16. A lighting system comprising a light source module, wherein the light source module comprises:

a substrate;

a first conductive semiconductor layer on the substrate;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a contact layer on the second conductive semiconductor layer;

an insulating layer on the contact layer;

a first branch electrode electrically connected to the first conductive semiconductor layer;

a plurality of first via electrodes connected to the first branch electrode and passing through the insulating layer such that the first via electrodes are electrically connected to the first conductive semiconductor layer;

a first pad electrode electrically connected to the first branch electrode;

a second pad electrode passing through the insulating layer such that the second pad contacts the contact layer;

a second branch electrode connected to the second pad electrode and disposed on the insulating layer; and

a plurality of second via electrodes passing through the insulating layer such that the second branch electrode and the contact layer are electrically connecting to each other.

17. The lighting system of claim 16, wherein one of the first via electrodes has a first horizontal width longer than a first distance between the first via electrodes.

18. The lighting system of claim 17, wherein the first horizontal width of one of the first via electrodes is 2.5 times or more of the first distance between the first via electrodes.

19. The lighting system of claim 16, wherein one of the first via electrodes contacts the first conductive semiconductor layer has a second thickness thicker than a first thickness of the first branch electrode when viewed from a top.

20. The lighting system of claim 16, further comprising:

a first reflective branch electrode under the first branch electrode;

a contact branch electrode between the first via electrode and the first conductive semiconductor layer;

a second reflective branch electrode under the second branch electrode; and

a third reflective via electrode between the second via electrode and the contact layer.