SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20160126422A1
• Filed: 12/04/2013
• Published: 05/05/2016
• Est. Priority Date: 12/04/2012
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: JEON, Soo Kun, PARK, Eun Hyun
• Granted Patent: US 9,691,944 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 31/0248 characterised by their semiconductor bodies
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H10K 50/00 Organic light-emitting devices integrated devices or assemblies of multiple devices H10K59/00, H10K65/00; organic semiconductor lasers H01S5/36

Abstract

A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.

Claims

1. A semiconductor light-emitting device comprising:

a plurality of semiconductor layers including a first semiconductor layer having a first conductivity;

a second semiconductor layer having a second conductivity, different from the first conductivity and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light by recombination of electrons and holes;

a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer;

a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer;

a non-conductive reflective film formed over the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer;

a first electrode which provides either electrons or holes to the plurality of semiconductor layers and is electrically connected to the etched-exposed surface of the first semiconductor layer; and

a second electrode disposed on the non-conductive reflective film, which provides either electrons if the holes are provided by the first electrode or holes if the electrons are provided by the first electrode and is electrically connected to the second semiconductor layer.

2. The semiconductor light-emitting device according to claim 1, wherein the non-conductive reflective film is extended over the first inclined face and the exposed, first semiconductor layer surface

3. The semiconductor light-emitting device according to claim 1, wherein the non-conductive reflective film comprises a DBR (Distributed Bragg Reflector).

4. The semiconductor light-emitting device according to claim 3, wherein the non-conductive reflective film comprises a dielectric film disposed below the DBR.

5. The semiconductor light-emitting device according to claim 1, wherein the non-conductive reflective film is formed on the second semiconductor layer only.

6. The semiconductor light-emitting device according to claim 1, wherein the non-conductive reflective film comprises a dielectric film.

7. The semiconductor light-emitting device according to claim 1, comprising an electrical connection that passes through the non-conductive reflective film and connects the second electrode to the second semiconductor layer.

8. The semiconductor light-emitting device according to claim 7, comprising a finger electrode that is interposed between the non-conductive reflective film and the second semiconductor layer and connected to the second electrode by an electrical connection.

9. The semiconductor light-emitting device according to claim 1, wherein the non-conductive reflective film has an inclined face on the edge.

10-14. -14. (canceled)