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LOW NOISE AMPLIFIER

  • US 20160126906A1
  • Filed: 11/03/2015
  • Published: 05/05/2016
  • Est. Priority Date: 11/03/2014
  • Status: Active Grant
First Claim
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1. Circuitry comprising:

  • a floating-body main field-effect transistor (FET) device comprising a gate contact, a drain contact, and a source contact;

    a body-contacted cascode FET device comprising a gate contact, a drain contact coupled to a supply voltage, and a source contact coupled to the drain contact of the floating-body main FET device and to a body region of the body-contacted cascode FET device; and

    biasing circuitry coupled to the gate contact of the floating-body main FET device and the gate contact of the body-contacted cascode FET device and configured to provide biasing signals to the floating-body main FET device and the body-contacted cascode FET device such that a majority of the supply voltage is provided across the body-contacted cascode FET device.

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