LOW NOISE AMPLIFIER
First Claim
1. Circuitry comprising:
- a floating-body main field-effect transistor (FET) device comprising a gate contact, a drain contact, and a source contact;
a body-contacted cascode FET device comprising a gate contact, a drain contact coupled to a supply voltage, and a source contact coupled to the drain contact of the floating-body main FET device and to a body region of the body-contacted cascode FET device; and
biasing circuitry coupled to the gate contact of the floating-body main FET device and the gate contact of the body-contacted cascode FET device and configured to provide biasing signals to the floating-body main FET device and the body-contacted cascode FET device such that a majority of the supply voltage is provided across the body-contacted cascode FET device.
2 Assignments
0 Petitions
Accused Products
Abstract
Circuitry includes a floating-body main field-effect transistor (FET) device, a body-contacted cascode FET device, and biasing circuitry coupled to the floating-body main FET device and the body-contacted cascode FET device. The floating-body main FET device includes a gate contact, a drain contact, and a source contact. The body-contacted cascode FET device includes a gate contact, a drain contact coupled to a supply voltage, and a source contact coupled to the drain contact of the floating-body main FET device and to a body region of the body-contacted cascode FET device. The biasing circuitry is coupled to the gate contact of the floating-body main FET device and the gate contact of the body-contacted cascode FET device and configured to provide biasing signals to the floating-body main FET device and the body-contacted cascode FET device such that a majority of the supply voltage is provided across the body-contacted cascode FET device.
34 Citations
20 Claims
-
1. Circuitry comprising:
-
a floating-body main field-effect transistor (FET) device comprising a gate contact, a drain contact, and a source contact; a body-contacted cascode FET device comprising a gate contact, a drain contact coupled to a supply voltage, and a source contact coupled to the drain contact of the floating-body main FET device and to a body region of the body-contacted cascode FET device; and biasing circuitry coupled to the gate contact of the floating-body main FET device and the gate contact of the body-contacted cascode FET device and configured to provide biasing signals to the floating-body main FET device and the body-contacted cascode FET device such that a majority of the supply voltage is provided across the body-contacted cascode FET device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. Circuitry comprising:
-
one or more floating-body main field-effect transistor (FET) devices; one or more body-contacted cascode FET devices coupled in series between a supply voltage and the one or more floating-body main FET devices; and biasing circuitry coupled to a gate contact of each of the one or more floating body main FET devices and a gate contact of each of the one or more body-contacted cascode FET devices and configured to provide biasing signals to each of the one or more floating-body main FET devices and each of the one or more body-contacted cascode FET devices such that a source-to-drain voltage of each of the one or more floating-body main FET devices is less than about 1.5V. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
-
Specification