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ALUMINUM OXIDE LANDING LAYER FOR CONDUCTIVE CHANNELS FOR A THREE DIMENSIONAL CIRCUIT DEVICE

  • US 20160133640A1
  • Filed: 07/11/2014
  • Published: 05/12/2016
  • Est. Priority Date: 07/11/2014
  • Status: Active Grant
First Claim
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1. A circuit device comprising:

  • a multitier stack of memory cells, each tier of the stack including a memory cell device;

    a source gate select polycrystalline (SGS poly) layer adjacent the multitier stack of memory cells, the SGS poly layer to provide a gate select signal for the memory cells of the multitier stack;

    a conductive source layer to provide a source conductor for a channel for the tiers of the stack; and

    an aluminum oxide (AlOx) layer between the source layer and the SGS poly layer, the AlOx layer providing an etch stop layer to separate the SGS poly layer from the source layer, wherein the AlOx layer provides both dry etch selectivity and wet etch selectivity, wherein a channel etch etches through the multitier stack of memory cells and the SGS poly layer, and stops at the AlOx layer and does not expose the source layer, and wherein a selective gate etch etches gate contacts in the memory cells and etches the AlOx layer to expose the source layer.

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