PHOTON EMITTER CHARACTERIZATION USING PHOTOLUMINESCENCE QUENCHING IN NITROGEN VACANCY COLOR CENTERS
First Claim
1. A method of determining one or more characteristics of a photon emitter, the method comprising:
- producing excitation illumination that is incident on a crystal film with one or more nitrogen vacancy centers, wherein the one or more nitrogen vacancy centers produces photoluminescence with an intensity in response to the excitation illumination;
producing illumination from the photon emitter, the illumination being incident on the crystal film with the one or more nitrogen vacancy centers, wherein the illumination produced by the photon emitter quenches the intensity of the photoluminescence from the one or more nitrogen vacancy centers;
detecting an amount of quenching of the intensity of the photoluminescence from the one or more nitrogen vacancy centers caused by the illumination of the photon emitter; and
analyzing the amount of quenching of the intensity of the photoluminescence to determine the one or more characteristics of the photon emitter.
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Accused Products
Abstract
A crystal film with nitrogen vacancy centers is placed in close proximity to a photon emitter. Excitation illumination is produced to cause the nitrogen vacancy centers to produce photoluminescence. Illumination is produced by the photon emitter, which may be near field or far field and which quenches the photoluminescence intensity using an effect known as Stimulated Emission Depletion (STED). The quenching caused by the photon emitter is detected and analyzed to determine characteristics of the photon emitter. The analysis takes into account the characteristic dependence of the STED on the depletion light power, i.e. the photon source, and a spatial distribution of the light intensity. The analysis may be applied to spatially resolved measurements or an integral value of the photoluminescence quenching. The analysis may determine characteristics such as peak power, power scaling factor, and FWHM of the illumination profile of the photon emitter.
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Citations
40 Claims
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1. A method of determining one or more characteristics of a photon emitter, the method comprising:
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producing excitation illumination that is incident on a crystal film with one or more nitrogen vacancy centers, wherein the one or more nitrogen vacancy centers produces photoluminescence with an intensity in response to the excitation illumination; producing illumination from the photon emitter, the illumination being incident on the crystal film with the one or more nitrogen vacancy centers, wherein the illumination produced by the photon emitter quenches the intensity of the photoluminescence from the one or more nitrogen vacancy centers; detecting an amount of quenching of the intensity of the photoluminescence from the one or more nitrogen vacancy centers caused by the illumination of the photon emitter; and analyzing the amount of quenching of the intensity of the photoluminescence to determine the one or more characteristics of the photon emitter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of determining one or more characteristics of a photon emitter, the method comprising:
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producing a first excitation illumination that is incident on a crystal film with one or more nitrogen vacancy centers, wherein the one or more nitrogen vacancy centers produces photoluminescence with an intensity in response to the first excitation illumination; detecting a first photoluminescence intensity from the one or more nitrogen vacancy centers in response to the first excitation illumination; producing a second excitation illumination that is incident on the crystal film with the one or more nitrogen vacancy centers; producing illumination from the photon emitter, the illumination being incident on the crystal film with the one or more nitrogen vacancy centers, wherein the illumination produced by the photon emitter quenches the intensity of the photoluminescence produced by the one or more nitrogen vacancy centers in response to the second excitation illumination; detecting a second photoluminescence intensity from the one or more nitrogen vacancy centers in response to the second excitation illumination and the illumination produced by the photon emitter; determining an amount of quenching of photoluminescence intensity based on a difference between the first photoluminescence intensity and the second photoluminescence intensity; and analyzing the amount of quenching of the intensity of the photoluminescence to determine the one or more characteristics of the photon emitter. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. An apparatus for determining one or more characteristics of a photon emitter, the apparatus comprising:
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a light source that produces excitation illumination that is incident on a crystal film with one or more nitrogen vacancy centers, wherein the one or more nitrogen vacancy centers produces photoluminescence with an intensity in response to the excitation illumination; a microscope configured to detect the photoluminescence produced by the nitrogen vacancy centers in response to the excitation illumination; a bias source configured to provide bias signals; a probe card coupled to the bias source and configured to be connected to a device that includes the photon emitter, the probe card provides a bias signal to the device that causes the photon emitter to emit illumination that is incident on the crystal film with the one or more nitrogen vacancy centers, wherein the illumination produced by the photon emitter quenches the intensity of the photoluminescence from the one or more nitrogen vacancy centers; and a processor coupled to control the microscope, the light source and the bias source and configured to cause the microscope to detect the photoluminescence produced by the nitrogen vacancy centers in response to the excitation illumination and to determine an amount of quenching of the intensity of the photoluminescence from the one or more nitrogen vacancy centers caused by the illumination produced by the photon emitter, and to analyze the amount of quenching of the intensity of the photoluminescence to determine the one or more characteristics of the photon emitter. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification