POWER MODULE AND FABRICATION METHOD FOR THE SAME
First Claim
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1. A power module comprising:
- an insulating layer;
a metal layer disposed on the insulating layer;
a semiconductor chip disposed on the metal layer; and
a mold resin formed so as to cover the semiconductor chip and at least a part of the metal layer, whereina groove into which a part of the insulating layer is inserted is formed on a surface of the metal layer facing the insulating layer.
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Abstract
A power module includes: an insulating layer; a leadframe disposed on the insulating layer; a semiconductor chip disposed on the leadframe; and a mold resin formed so as to cover the semiconductor chip and at least a part of the metal layer, wherein a groove into which a part of the insulating layer is inserted is formed on a surface of the leadframe facing the insulating layer. Accordingly, there can be provided the power module with improved reliability so that the insulating layer and the leadframe may be hardly deviated from each other even if external force is applied thereon; and a fabrication method for such a power module.
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Citations
21 Claims
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1. A power module comprising:
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an insulating layer; a metal layer disposed on the insulating layer; a semiconductor chip disposed on the metal layer; and a mold resin formed so as to cover the semiconductor chip and at least a part of the metal layer, wherein a groove into which a part of the insulating layer is inserted is formed on a surface of the metal layer facing the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A fabrication method for a power module comprising:
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forming a groove on a bottom surface of a leadframe; bonding a semiconductor chip to the leadframe with a conductive bonding material; electrically connecting the semiconductor chip and the leadframe to each other using a connecting member; disposing the leadframe on a metallic mold and then forming an insulating layer on a bottom surface of the leadframe, the insulating layer formed so as to be inserted into the bottom surface of the leadframe; and after curing the insulating layer, closing the metallic mold, and then pouring a mold resin therein in order to mold the leadframe, the conductive bonding material, the semiconductor chip, and the connecting member. - View Dependent Claims (20)
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21. A fabrication method for a power module comprising:
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forming a groove on a bottom surface of a leadframe; bonding a semiconductor chip to the leadframe with a conductive bonding material; electrically connect the semiconductor chip and the leadframe to each other using a connecting member; disposing the leadframe on a metallic mold and then forming an insulating layer on a bottom surface of the leadframe; and after curing the insulating layer, closing the metallic mold, and then pouring a mold resin therein in order to mold the leadframe, the conductive bonding material, the semiconductor chip, and the connecting member, wherein the step of forming the insulating layer on the bottom surface of the leadframe comprises forming so that a surface of the mold resin and a surface of the leadframe are flush with each other at a corner portion of the leadframe, and then forming the insulating layer on the surface of the mold resin and the surface of the leadframe which are flush with each other.
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Specification