×

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

  • US 20160141394A1
  • Filed: 01/26/2016
  • Published: 05/19/2016
  • Est. Priority Date: 11/27/2013
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a semiconductor device, comprising:

  • etching a substrate to define a fin structure;

    forming a dummy gate structure over a channel region of the fin structure;

    forming an interlayer dielectric (ILD) layer over a source/drain region in contact with the channel region;

    implanting a dopant into a portion of the ILD layer to define an implanted ILD layer over a second portion of the ILD layer in which the dopant is not implanted; and

    annealing the implanted ILD layer to stress the implanted ILD layer, wherein the stress applies a compressive force on the dummy gate structure.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×