METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE

• US 20160141446A1
• Filed: 10/28/2015
• Published: 05/19/2016
• Est. Priority Date: 11/18/2014
• Status: Abandoned Application

• Current Assignee: PlayNitride Inc.
• Original Assignee: PlayNitride Inc.
• Inventors: Huang, Shao-Hua, Li, Yun-Li
• Application Number:
  US14/924,718
• Publication Number:
  US 20160141446A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

A method for manufacturing a light emitting device is provided. Step (a): A semiconductor wafer having a substrate and at least one epitaxial structure is provided. Step (b): An electrode connection layer is formed on the epitaxial structure, wherein the electrode connection layer includes connection pads, first electrodes and second electrodes. Step (c): A package substrate having the similar size as that of the semiconductor wafer and having conductive through holes is provided. Step (d): The semiconductor wafer and the package substrate are bonded by aligning the connection pads with the conductive through holes, so that the conductive through holes are electrically connected to a first type semiconductor layer or a second type semiconductor layer of the epitaxial structure. Step (e): The substrate is removed so as to expose a surface of the epitaxial structure and form a light emitting device.

Claims

1. A method for manufacturing a light emitting device, comprising:

step (a);

providing a semiconductor wafer comprising a substrate and at least one epitaxial structure, wherein the epitaxial structure comprises;

a first type semiconductor layer;

a second type semiconductor layer, disposed on the substrate, wherein the first type semiconductor layer is located on the second type semiconductor layer; and

a light emitting layer, disposed between the first type semiconductor layer and the second type semiconductor layer;

step (b);

forming an electrode connection layer on the epitaxial structure, wherein the electrode connection layer comprises a plurality of connection pads, a plurality of first electrodes and a plurality of second electrodes, the first electrodes and the second electrodes are separated from each other and are connected to the corresponding connection pads, and are located at a same side of the epitaxial structure, wherein the first electrodes and the second electrodes are electrically connected to the first type semiconductor layer and the second type semiconductor layer to define a plurality of light emitting units;

step (c);

providing a package substrate having a similar size as that of the semiconductor wafer, wherein the package substrate has a plurality of conductive through holes penetrating through the package substrate;

step (d);

bonding the semiconductor wafer and the package substrate by aligning the connection pads of the electrode connection layer with the conductive through holes, so that the conductive through holes are electrically connected to the first type semiconductor layer or the second type semiconductor layer; and

step (e);

removing the substrate to expose a surface of the epitaxial structure, so as to form the light emitting device.

2. The method for manufacturing the light emitting device as claimed in claim 1, further comprising:

step (f-1);

after the step (e), performing a cutting process to the light emitting device to form a plurality of sub-light emitting devices, wherein each of the sub-light emitting devices comprises a plurality of the light emitting units.

3. The method for manufacturing the light emitting device as claimed in claim 1, further comprising:

step (f-2);

after the step (e), performing a cutting process to the light emitting device to form a plurality of sub-light emitting devices, wherein the sub-light emitting devices are separated from each other and an edge of the connection pad of the electrode connection layer is aligned with an edge of the package substrate.

4. The method for manufacturing the light emitting device as claimed in claim 1, further comprising:

step (f-3);

after the step (e), providing a sheet-like wavelength converting film, wherein an area of the sheet-like wavelength converting film is greater than that of the package substrate, and the sheet-like wavelength converting film is bonded to the surface of the epitaxial structure of the light emitting device.

5. The method for manufacturing the light emitting device as claimed in claim 4, wherein in the step (f-3), the sheet-like wavelength converting film and the epitaxial structure have micron-scale voids therebetween.

6. The method for manufacturing the light emitting device as claimed in claim 4, wherein in the step (f-3), after the sheet-like wavelength converting film is bonded to the surface of the epitaxial structure of the light emitting device, the method further comprises:

forming a color mixing layer on the sheet-like wavelength converting film.

7. The method for manufacturing the light emitting device as claimed in claim 4, further comprising:

step (g);

after the step (f-3), performing a cutting process, and using a same cutting device to cut the sheet-like wavelength converting film and the light emitting device to form a plurality of sub-light emitting devices.

8. The method for manufacturing the light emitting device as claimed in claim 7, wherein the step (g) is performed in a direction from the sheet-like wavelength converting film to the package substrate.

9. The method for manufacturing the light emitting device as claimed in claim 1, wherein in the step (b), before the electrode connection layer is formed, the method further comprises:

forming an insulation layer on the first type semiconductor layer, wherein the first electrode penetrates through the insulation layer and is electrically connected to the first type semiconductor layer, the second electrode penetrates through the insulation layer, the first type semiconductor layer and the light emitting layer and is electrically connected to the second type semiconductor layer.

10. The method for manufacturing the light emitting device as claimed in claim 1, wherein in the step (d), the connection pads of the semiconductor wafer are melt through heating for bonding to the package substrate.

11. The method for manufacturing the light emitting device as claimed in claim 1, wherein in the step (d), a bonding area between the semiconductor wafer and the package substrate is smaller than a surface area of an upper surface of the package substrate.

12. The method for manufacturing the light emitting device as claimed in claim 1, wherein in the step (e), after the surface of the epitaxial structure is exposed, the method further comprises:

forming an optical coupling layer on the surface of the epitaxial structure.

13. The method for manufacturing the light emitting device as claimed in claim 1, wherein in the step (d), after the semiconductor wafer and the package substrate are bonded, each of the conductive through holes and the corresponding connection pad have at least one space therebetween.

14. The method for manufacturing the light emitting device as claimed in claim 1, wherein in the step (b), a contour of each of the second electrodes when viewing from atop is a combination of a dot-like profile and a linear profile, and a contour of each of the first electrodes when viewing from atop is a dot-like profile.