LIGHT-EMITTING DEVICE
First Claim
1. A light-emitting device comprising:
- a substrate;
a light-emitting structure including first and second nitride-based semiconductor layers on the substrate, and an active layer between the first and second nitride-based semiconductor layers;
an insulating layer on a top surface of the light-emitting structure;
a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section;
a transparent conductive layer covering the top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion; and
an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.
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Accused Products
Abstract
A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.
15 Citations
20 Claims
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1. A light-emitting device comprising:
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a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate, and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering the top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light-emitting device comprising:
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a light-emitting structure including first and second nitride-based semiconductor layers, and an active layer between the first and second nitride-based semiconductor layers; a current blocking layer on a top surface of the light-emitting structure; a first protrusion and a second protrusion on the current blocking layer, top surfaces of the first protrusion and the second protrusion being larger than bottom surfaces thereof, the first protrusion and the second protrusion having a trapezoidal cross-section; a transparent conductive layer formed on the top surfaces of the first protrusion and the second protrusion and a top surface of the current blocking layer; and an electrode between the first protrusion and the second protrusion on the transparent conductive layer, the electrode extending to cover a portion of the top surface of the first protrusion and a portion of the top surface of the second protrusion. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A light-emitting device comprising:
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a light-emitting structure including first and second nitride-based semiconductor layers, and an active layer disposed between the first and second nitride-based semiconductor layers; an insulating layer formed on the light-emitting structure; a protrusion protruding from the insulating layer in a direction away from the light-emitting structure, and having first and second inclined surfaces and a top surface intersected by the first and second inclined surfaces; an electrode covering at least a portion of the second inclined surface and not covering the entire top surface of the protrusion; and a transparent conductive layer interposed between the electrode and the protrusion, electrically connected to the first nitride-based semiconductor layer, and at least extending between opposite sides of the insulating layer to cover the protrusion and the insulating layer. - View Dependent Claims (19, 20)
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Specification