SPIN CURRENT GENERATION WITH NANO-OSCILLATOR
First Claim
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1. A device comprising:
- a spin channel to transport a spin current;
a nano-oscillator having a magnetization state that, in response to a DC input voltage or current, oscillates between a first state and a second state and induces the spin current within the spin channel; and
a magnetoresistive device that receives the spin current from the nano-oscillator, the magnetoresistive device having a magnetization state that is set to a parallel or anti-parallel state by the received spin current.
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Abstract
A device including a spin channel to transport a spin current, a nano-oscillator, and a magnetoresistive device that receives the spin current from the nano-oscillator. The nano-oscillator includes a magnetization state that oscillates between a first state and a second state in response to an input voltage or current. The oscillation of the nano-oscillator may induce the spin current within the spin channel. The magnetoresistive device includes a magnetization state that is set based at least in part on the received spin current.
16 Citations
20 Claims
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1. A device comprising:
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a spin channel to transport a spin current; a nano-oscillator having a magnetization state that, in response to a DC input voltage or current, oscillates between a first state and a second state and induces the spin current within the spin channel; and a magnetoresistive device that receives the spin current from the nano-oscillator, the magnetoresistive device having a magnetization state that is set to a parallel or anti-parallel state by the received spin current. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method comprising:
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applying a DC input voltage or current to a nano-oscillator to oscillate a magnetization state of the nano-oscillator between a first state and a second state and induce a spin current in a spin channel coupled to the nano-oscillator; and setting, in response to the spin current, a magnetization state of a magnetoresistive device coupled to the spin channel, wherein the magnetization state of the magnetoresistive device is set to one of a parallel or anti-parallel state by the received spin current. - View Dependent Claims (10, 11, 12, 13)
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14. A logic device comprising:
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a spin channel to transport a spin current; a nano-oscillator having a magnetization state that, in response to a DC input voltage or current, oscillates between a first state and a second state and induces the spin current within the spin channel; a magnetoresistive device that receives the spin current from the nano-oscillator, the magnetoresistive device having a magnetization state that is set to a parallel or anti-parallel state based at least in part on the received spin current; and a controller configured to measure a resistivity of the magnetoresistive device and output a voltage or current. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method comprising:
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applying DC input voltage or current to a nano-oscillator to oscillate a magnetization state of the nano-oscillator between a first state and a second state and induce a spin current in a spin channel coupled to the nano-oscillator; applying a gate voltage or current to the spin-channel to amplify an input current received by the spin channel with the spin current; and outputting the amplified current.
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Specification