MASK ASSEMBLY FOR THIN FILM DEPOSITION AND METHOD OF MANUFACTURING THE MASK ASSEMBLY

• US 20160144393A1
• Filed: 07/14/2015
• Published: 05/26/2016
• Est. Priority Date: 11/24/2014
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: KWON, Ohseob
• Granted Patent: US 10,196,732 B2
• Time in Patent Office: Days
• CPC Class Codes: B05C 21/005 Masking devices stencils B05C17/06; masking devices for which the means for applying liquids or other fluent material is spraying or is not important B05B12/20
• CPC Class Codes: C23C 14/042 using masks
• CPC Class Codes: C23C 16/042 using masks
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H10K 71/166 using selective deposition, e.g. using a mask
• CPC Class Codes: H10K 99/00 Subject matter not provided for in other groups of this subclass

Abstract

A mask assembly for thin film deposition, the mask assembly, including a mask frame having an opening; a mask coupled to the mask frame and having a first surface facing a substrate and a second surface opposite to the first surface, a plurality of deposition pattern portions, and a rib between the adjacent deposition pattern portions, the mask having a partially etched area, the plurality of deposition pattern portions being within the partially etched area; and a partial etching extension portion in an outer portion of an area corresponding to the plurality of deposition pattern portions.

Claims

1. A mask assembly for thin film deposition, the mask assembly, comprising:

a mask frame having an opening;

a mask coupled to the mask frame and having a first surface facing a substrate and a second surface opposite to the first surface, a plurality of deposition pattern portions, and a rib between adjacent deposition pattern portions, the mask having a partially etched area, the plurality of deposition pattern portions being within the partially etched area; and

a partial etching extension portion in an outer portion of an area corresponding to the plurality of deposition pattern portions.

2. The mask assembly as claimed in claim 1, wherein the deposition pattern portions include a plurality of slits that pass through the mask in a thickness direction of the mask.

3. The mask assembly as claimed in claim 2, wherein the partial etching extension portion is only in an area of the mask etched without passing through the mask.

4. The mask assembly as claimed in claim 3, wherein:

the deposition pattern portions are spaced apart from one another in a length direction of the mask, and

the partially etched area extends from a first end to a second end opposite to the first end in the length direction of the mask.

5. The mask assembly as claimed in claim 4, wherein the partial etching extension portion extends from the outer portion of the area corresponding to the plurality of deposition pattern portions to an edge of the partially etched area.

6. The mask assembly as claimed in claim 3, wherein:

the deposition pattern portions are spaced apart from one another in a length direction of the mask, and

the partially etched area is independently formed for each area corresponding to the deposition pattern portions.

7. The mask assembly as claimed in claim 6, wherein the partial etching extension portion extends from each outer portion of the area corresponding to the deposition pattern portions to an edge of each of the partially etched areas.

8. The mask assembly as claimed in claim 7, wherein:

the rib between the adjacent deposition pattern portions connects the adjacent deposition pattern portions, and

the rib is between partial etching extension portions that extend from adjacent deposition pattern portions in opposite directions to each other.

9. The mask assembly as claimed in claim 8, wherein the rib is thicker than the partial etching extension portion.

10. The mask assembly as claimed in claim 1, wherein the partially etched area is an area formed by etching the mask from the second surface to the first surface of the mask so that a portion of the mask has a smaller thickness than other portions of the mask.

11. The mask assembly as claimed in claim 10, wherein the first surface contacts a substrate for deposition, to be patterned.

12. The mask assembly as claimed in claim 1, wherein the mask is at least one division mask.

13. A method of manufacturing a mask assembly for thin film deposition, the method comprising:

preparing a mask having a first surface facing a substrate and a second surface opposite to the first surface;

forming a partially etched area in the mask;

forming a plurality of deposition pattern portions in the partially etched area; and

forming a partial etching extension portion in an outer portion of an area corresponding to the plurality of deposition pattern portions.

14. The method as claimed in claim 13, wherein forming the partially etched area includes coating at least the first surface of the mask with a first photosensitive layer and exposing the first photosensitive layer to light and developing and etching the first photosensitive layer.

15. The method as claimed in claim 13, wherein forming the partial etching extension portion includes etching the mask from the outer portion of the area corresponding to the plurality of deposition pattern portions to an edge of the partially etched area without passing through the mask.

16. The method as claimed in claim 15, wherein:

the partially etched area extends from a first end to a second end opposite to the first end in a length direction of the mask, and

the deposition pattern portions are spaced apart from one another in the length direction of the mask.

17. The method as claimed in claim 15, wherein:

the partially etched area is independently formed for each area where the deposition pattern portions are formed, and

the plurality of deposition pattern portions are formed in each of a plurality of partially etched areas.

18. The method as claimed in claim 13, wherein the deposition pattern portions are formed by coating at least the second surface of the mask with a second photosensitive layer, exposing the second photosensitive layer to light and developing the second photosensitive layer, and formed as slits that pass through the mask in a thickness direction of the mask by performing at least one etching operation.

19. The method as claimed in claim 18, wherein the second photosensitive layer is patterned both on the first surface and the second surface of the mask, and the deposition pattern portions are formed by performing a two-step etching operation on the first surface and the second surface of the mask.

20. The method as claimed in claim 18, wherein the second photosensitive layer is patterned on one of the first surface and the second surface of the mask, and the deposition pattern portions are formed by performing a one-step etching operation on the one of the first and second surfaces of the mask.