×

CALIBRATING OPTIMAL READ LEVELS

  • US 20160148702A1
  • Filed: 11/20/2014
  • Published: 05/26/2016
  • Est. Priority Date: 11/20/2014
  • Status: Active Grant
First Claim
Patent Images

1. A machine-implemented method, comprising:

  • after a predetermined period of time in a life cycle of a flash memory device, reading a plurality of memory cells of the flash memory device a plurality of times, each of the reads using a read level voltage adjusted by a respective one of a plurality of read level offset voltages;

    identifying an offset voltage, offset from the read level voltage, that corresponds to a zero crossing point in a range of reliability values corresponding to the plurality of read memory cells; and

    setting the read level voltage to a calibrated voltage based on the offset voltage.

View all claims
  • 8 Assignments
Timeline View
Assignment View
    ×
    ×