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CONDUCTIVITY BASED ON SELECTIVE ETCH FOR GAN DEVICES AND APPLICATIONS THEREOF

  • US 20160153113A1
  • Filed: 10/30/2015
  • Published: 06/02/2016
  • Est. Priority Date: 01/27/2010
  • Status: Active Grant
First Claim
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1. A method for generating porous GaN, comprising:

  • (a) exposing GaN to an electrolyte;

    (b) coupling the GaN to one terminal of a power supply and an electrode immersed in the electrolyte to another terminal of the power supply to thereby form a circuit; and

    (c) energizing the circuit to increase the porosity of at least a portion of the GaN.

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