Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device
First Claim
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1. A semiconductor device comprising:
- a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film; and
a pair of electrodes over the oxide semiconductor film,wherein the oxide semiconductor film comprises a channel region and n-type regions in contact with the pair of electrodes, andwherein the channel region has fewer oxygen vacancies than the n-type regions.
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Abstract
A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device including an oxide semiconductor film. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a channel region and n-type regions in contact with the pair of electrodes. The channel region has fewer oxygen vacancies than the n-type regions.
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Citations
21 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a pair of electrodes over the oxide semiconductor film, wherein the oxide semiconductor film comprises a channel region and n-type regions in contact with the pair of electrodes, and wherein the channel region has fewer oxygen vacancies than the n-type regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first gate electrode; a gate insulating film over the first gate electrode; an oxide semiconductor film over the gate insulating film; a pair of electrodes over the oxide semiconductor film; an oxide insulating film over the oxide semiconductor film and the pair of electrodes; a nitride insulating film over the oxide insulating film; and a second gate electrode over the nitride insulating film, wherein the oxide semiconductor film comprises a channel region and n-type regions in contact with the pair of electrodes, and wherein the channel region has fewer oxygen vacancies than the n-type regions. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a conductive film over the oxide semiconductor film to form a region having oxygen vacancies in the oxide semiconductor film; processing the conductive film to form a pair of electrodes; and removing the region of the oxide semiconductor film which is between the pair of electrodes with a chemical solution or a gas. - View Dependent Claims (19, 20, 21)
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Specification