OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

• US 20160155891A1
• Filed: 06/25/2014
• Published: 06/02/2016
• Est. Priority Date: 06/26/2013
• Status: Abandoned Application

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Moosburger, J?rgen, Stoll, Ion, Schwarz, Thomas, Richter, Markus, Dirscherl, Georg
• Application Number:
  US14/900,243
• Publication Number:
  US 20160155891A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic component includes an optoelectronic semiconductor chip embedded in a molded body such that an upper side of the optoelectronic semiconductor chip is at least partially not covered by the molded body, wherein a first metallization is arranged on an upper side of the molded body, wherein the first metallization is electrically insulated from the optoelectronic semiconductor chip, and a first material is arranged on the first metallization.

Claims

1-19. -19. (canceled)

20. An optoelectronic component comprising an optoelectronic semiconductor chip embedded in a molded body such that an upper side of the optoelectronic semiconductor chip is at least partially not covered by the molded body,

wherein a first metallization is arranged on an upper side of the molded body,

wherein the first metallization is electrically insulated from the optoelectronic semiconductor chip, and

a first material is arranged on the first metallization.

21. The optoelectronic component as claimed in claim 20, wherein the first material comprises TiO₂, Al₂O₃, ZrO₂, SiO₂, HfO₂ and/or a colored pigment.

22. The optoelectronic component as claimed in claim 20, wherein an element that comprises a luminescent substance configured to convert a wavelength of electromagnetic radiation is arranged over the upper side of the optoelectronic semiconductor chip.

23. The optoelectronic component as claimed in claim 20, wherein an electrically conductive through-contact is embedded in the molded body.

24. The optoelectronic component as claimed in claim 20, wherein a protective diode is embedded in the molded body.

25. A method of producing an optoelectronic component comprising:

providing an optoelectronic semiconductor chip embedded in a molded body such that an upper side of the optoelectronic semiconductor chip is at least partially not covered by the molded body;

applying a first metallization on an upper side of the molded body; and

depositing a first material on the first metallization by electrophoretic deposition.

26. The method as claimed in claim 25, wherein the first metallization is applied such that the first metallization is electrically insulated from the optoelectronic semiconductor chip.

27. The method as claimed in claim 25, wherein the first material is deposited in the form of particles which have an average size of 200 nm to 10 μ

m.

28. The method as claimed in claim 25, wherein the optoelectronic semiconductor chip embedded in the molded body is provided such that a lower side of the optoelectronic semiconductor chip is at least partially not covered by the molded body.

29. The method as claimed in claim 25, wherein provision of the optoelectronic semiconductor chip embedded in the molded body comprises embedding the optoelectronic semiconductor chip in the molded body by a molding process.

30. The method as claimed in claim 25, further comprising applying a second metallization electrically insulated from the first metallization on the upper side of the molded body.

31. The method as claimed in claim 25, further comprising depositing a second material by electrophoretic deposition.

32. The method as claimed in claim 31, wherein the second material comprises a luminescent substance configured to convert a wavelength of electromagnetic radiation.

33. The method as claimed in claim 31, wherein the second material is deposited in the form of particles having an average size of 500 nm to 30 μ

m.

34. The method as claimed in claim 30, further comprising removing at least a part of the second metallization.

35. The method as claimed in claim 25, further comprising depositing a protective layer over the first material.

36. The method as claimed in claim 35, wherein the protective layer comprises a luminescent substance configured to convert a wavelength of electromagnetic radiation.

37. The method as claimed in claim 25, further comprising arranging a wavelength-converting element over the upper side of the optoelectronic semiconductor chip.

38. The method as claimed in claim 25, wherein the molded body is provided having a second embedded optoelectronic semiconductor chip, and

the first metallization is applied such that a continuous section of the first metallization surrounds the upper side of the first optoelectronic semiconductor chip and an upper side of the second optoelectronic semiconductor chip.

39. The method as claimed in claim 31, further comprising removing at least a part of the second metallization.