COATED FULLERENES, COMPOSITES AND DIELECTRICS MADE THEREFROM

• US 20160163652A1
• Filed: 02/12/2016
• Published: 06/09/2016
• Est. Priority Date: 11/20/2001
• Status: Abandoned Application

• Current Assignee: Natcore Technology, Inc., Rice University
• Original Assignee: Natcore Technology, Inc.
• Inventors: Barron, Andrew R., Flood, Dennis J., Whitsitt, Elizabeth
• Application Number:
  US15/042,445
• Publication Number:
  US 20160163652A1
• Time in Patent Office: Days
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 2202/02 Single-walled nanotubes
• CPC Class Codes: C01B 2202/06 Multi-walled nanotubes
• CPC Class Codes: C01B 2202/28 Solid content in solvents
• CPC Class Codes: C01B 32/156 After-treatment
• CPC Class Codes: C01B 32/168 After-treatment
• CPC Class Codes: C01B 32/174 Derivatisation; Solubilisation; Dispersion in solvents
• CPC Class Codes: C01P 2002/54 one element only
• CPC Class Codes: C01P 2004/03 obtained by SEM
• CPC Class Codes: C01P 2004/04 obtained by TEM, STEM, STM or AFM
• CPC Class Codes: C01P 2004/12 with a cylindrical shape
• CPC Class Codes: C01P 2004/13 Nanotubes
• CPC Class Codes: C01P 2004/32 Spheres
• CPC Class Codes: C01P 2004/84 one phase coated with the other
• CPC Class Codes: C01P 2006/40 Electric properties
• CPC Class Codes: C04B 2235/5288 Carbon nanotubes
• CPC Class Codes: C04B 35/62807 Silica or silicates
• CPC Class Codes: C08K 9/02 Ingredients treated with inorganic substances
• CPC Class Codes: C09C 1/3045 : Treatment with inorganic compounds
• CPC Class Codes: C09C 1/44 : Carbon
• CPC Class Codes: H01L 21/76838 : characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 23/53276 : containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 85/211 : Fullerenes, e.g. C60
• CPC Class Codes: H10K 85/221 : Carbon nanotubes
• CPC Class Codes: H10K 85/615 : Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
• CPC Class Codes: Y10T 428/30 : Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics, and/or inorganic oxides. A coated fullerene interconnect device where at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.

Claims

1. A method of making a coated fullerene interconnect device comprising a layer of at least one inorganic material covering at least a portion of at least one surface of fullerenes wherein:

at least two fullerenes are contacting each other to form a spontaneous interconnect; and

at least one suitable metal contact is found at the site of at least one spontaneous interconnect, wherein said method comprises;

(a) dispersing a fullerene under suitable conditions to provide a dispersed fullerene;

(b) depositing at least one inorganic material under suitable conditions onto at least one surface of the dispersed fullerene to provide a coated fullerene;

(c) isolating the coated fullerene;

(d) removing at least a portion of the layer of inorganic material in a manner suitable for permitting at least two fullerenes to contact each other to provide at least one spontaneous interconnect;

(e) optionally, allowing at least two fullerenes of a spontaneous interconnect to separate;

(f) optionally, allowing at least two fullerenes to contact each other to provide at least one new spontaneous interconnect; and

(g) depositing a suitable metal contact at the site of at least one spontaneous interconnect and/or one new spontaneous interconnect.

2. The method according to claim 1, wherein the fullerenes are selected from the group consisting of C₆₀, C₇₂, C₈₄, C₉₆, C₁₀₈, C₁₂₀, single-walled carbon nanotubes (SWNT), multi-walled carbon nanotubes (MWNT), and combinations thereof.

3. The method according to claim 2, wherein the fullerenes are single-walled carbon nanotubes (SWNT).

4. The method according to claim 1, wherein the at least one inorganic material comprises an inorganic oxide.

5. The method according to claim 4, wherein the inorganic oxide is an oxide of silicon.

6. The method according to claim 1, wherein the fullerene is dispersed by a technique of chemical functionalization or surfactant addition.

7. The method according to claim 1, wherein removing the at least a portion of the layer of inorganic material comprises treatment with a suitable etchant.

8. The method according to claim 1, wherein removing the at least a portion of the layer of inorganic material is effective in removing all of the inorganic material.

9. The method according to claim 1, wherein removing the at least a portion of the layer of inorganic material in a suitable manner comprises selectively removing inorganic material from the ends of the fullerenes.

10. The method according to claim 1, wherein removing the at least a portion of the layer of inorganic material in a suitable manner comprises selectively removing inorganic material from the central portion of the fullerenes.

11. The method according to claim 1, wherein separating the at least one spontaneous interconnect comprises treatment with a suitable surfactant.

12. The method according to claim 1, wherein the method further comprises testing the coated fullerene interconnect devices for suitability as electronic devices.

13. A coated fullerene interconnect device made according to the method of claim 1.

14. A coated fullerene interconnect device comprising:

a layer of at least one inorganic material covering at least a portion of at least one surface of fullerenes, wherein at least two fullerenes are contacting each other to form a spontaneous interconnect; and

at least one suitable metal contact is found at the site of at least one spontaneous interconnect.

15. The coated fullerene interconnect device according to claim 14, wherein the device performs some electronic switching function.

16. The coated fullerene interconnect device according to claim 14, wherein the device performs some electronic memory function.

17. The coated fullerene interconnect device according to claim 14, wherein the device performs some electronic sensory function.

18. A method of depositing a dielectric onto a silicon computer chip comprising a coated fullerene comprising:

a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene onto a computer chip, wherein the method comprises

contacting a solution comprising coated fullerene with at least one region of a computer chip in a manner effective for depositing a dielectric layer to said region.

19. The method according to claim 18, wherein contacting a solution comprising coated fullerene with at least one region of a computer chip in an effective manner takes place at a temperature no greater than 50°

C.

20. The method according to claim 18, wherein the dielectric layer is uniform in thickness.

21. The method according to claim 18, wherein contacting a solution comprising coated fullerene with at least one region of a computer chip in an effective manner comprises effecting control over the void volume.