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SEMICONDUCTOR DEVICES WITH STRUCTURES FOR SUPPRESSION OF PARASITIC BIPOLAR EFFECT IN STACKED NANOSHEET FETS AND METHODS OF FABRICATING THE SAME

  • US 20160163796A1
  • Filed: 11/25/2015
  • Published: 06/09/2016
  • Est. Priority Date: 12/05/2014
  • Status: Active Grant
First Claim
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1. A device comprising a nanosheet field effect transistor (FET), the nanosheet FET comprising:

  • a well that is doped with impurities at a surface of a substrate;

    a channel comprising a plurality of stacked nanosheets on the well, ones of the plurality of stacked nanosheets comprising a semiconductor material that is doped with impurities of a same conductivity type as the impurities of the well and ones of the plurality of stacked nanosheets spaced apart from each other in a direction that is perpendicular to the surface of the substrate;

    a gate comprising a workfunction metal on the plurality of nanosheets, between adjacent ones of the plurality of nanosheets, and between the plurality of nanosheets and the well;

    a conductive material adjacent the plurality of nanosheets and that electrically connects ones of the plurality of nanosheets to the well;

    an isolation layer on the well that electrically insulates the well from the workfunction metal.

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