SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR

• US 20160163849A1
• Filed: 05/08/2015
• Published: 06/09/2016
• Est. Priority Date: 12/08/2014
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: GRANDRY, HUBERT, DUPUY, PHILIPPE
• Granted Patent: US 9,837,526 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/823475 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 21/823487 with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface with a current flow parallel to the substrate surface H01L21/823431
• CPC Class Codes: H01L 27/0727 in combination with diodes, or capacitors or resistors
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/086 Impurity concentration or distribution
• CPC Class Codes: H01L 29/0865 Disposition
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.

Claims

1. A semiconductor product, comprising:

a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode;

a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and

a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein

the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.

2. A semiconductor product as claimed in claim 1, wherein the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor comprise channels of the same semiconductor type.

3. A semiconductor product as claimed in claim 1, wherein the interconnecting electrode is a doped semiconductor electrode, the first semiconductor electrode and second semiconductor electrode are distinct, doped portions of semiconductor material and appropriately doped portions of semiconductor material separate vertically the first semiconductor electrode and the interconnecting semiconductor electrode and appropriately doped portions of semiconductor material separate vertically the second semiconductor electrode and the interconnecting semiconductor electrode.

4. A semiconductor product as claimed in claim 1, wherein the semiconductor product has a first side and a second opposing side, and wherein the third semiconductor electrode is accessible via the first side and the first and second semiconductor electrodes are accessible via the second side.

5. A semiconductor product as claimed in claim 1, wherein the interconnecting semiconductor electrode is a common current electrode for the first vertical insulated-gate field-effect-transistor and the second vertical insulated-gate field-effect-transistor.

6. A semiconductor product as claimed in claim 1, comprising:

a lower planar substrate doped to form a lower current electrode of the second vertical insulated-gate field-effect-transistor;

a body doped to form a vertically extending channel of the second vertical insulated-gate field-effect-transistor;

an upper portion doped to form a higher current electrode of the second vertical insulated-gate field-effect-transistor, and a vertically extending insulated gate laterally adjacent the body.

7. A semiconductor product as claimed in claim 6, wherein the semiconductor structure comprises:

a lower drift region between the lower planar substrate doped to form a lower current electrode and the body doped to form a vertically extending channel, wherein the lower drift region is doped to have the same conductivity type as the lower current electrode and a different conductivity type to the body and wherein the lower drift region has a lower dopant concentration than the body and a lower dopant concentration than the lower current electrode.

8. A semiconductor product as claimed in claim 7, comprising a vertically extending lower shield plate electrode laterally adjacent the lower drift region.

9. A semiconductor product as claimed in claim 7, wherein the semiconductor structure comprises:

an upper drift region between the upper portion doped to form an upper current electrode and the body doped to form a vertically extending channel, wherein the upper drift region is doped to have the same conductivity type as the upper current electrode and a different conductivity type to the body and wherein the upper drift region has a lower dopant concentration than the body and a lower dopant concentration than the upper current electrode.

10. A semiconductor product as claimed in claim 9, comprising a vertically extending upper shield plate electrode laterally adjacent the upper drift region.

11. A semiconductor product as claimed in claim 6, wherein the semiconductor structure comprises a trench comprising at least the vertically extending insulated gate.

12. A semiconductor product as claimed in claim 1, wherein at least one of the first vertical insulated-gate field-effect-transistor and the second vertical insulated-gate field-effect-transistor is a bidirectional power metal-oxide-semiconductor field-effect-transistor.

13. A semiconductor product as claimed in claim 1, wherein the first vertical insulated gate field-effect-transistor provides first and second electrically controllable diodes.

14. A semiconductor product as claimed in claim 1, wherein a current path between the first semiconductor electrode and the second semiconductor electrode consists of only the first vertical insulated-gate field-effect-transistor and the second vertical insulated-gate field-effect-transistor which share the third semiconductor electrode as a common current electrode and wherein the current path comprises no other diode-effect device.

15. A semiconductor product as claimed in claim 1, comprising:

a second interconnecting semiconductor electrode defining a fourth semiconductor electrode;

a third switch, between the first semiconductor electrode and the fourth semiconductor electrode, provided by a third vertical insulated-gate field-effect-transistor; and

a fourth switch, between the second semiconductor electrode and the fourth semiconductor electrode, provided by a fourth vertical insulated-gate field-effect-transistor, wherein

the second interconnecting electrode interconnects the third vertical insulated gate field-effect-transistor and the fourth vertical insulated gate field-effect-transistor,

and wherein the first and second semiconductor electrodes form a first pair of semiconductor electrodes and wherein the third and fourth semiconductor electrodes form a second pair of semiconductor electrodes, wherein one of the first pair or the second pair of semiconductor electrodes is for receiving power and the other of the first pair or the second pair of semiconductor electrodes is for delivering power.

16. A semiconductor product as claimed in claim 15, wherein each of the first, second, third and fourth vertical insulated-gate field-effect-transistors comprises a body for providing a channel, wherein each body is a distinctly doped region of the same semiconductor material.

17. A semiconductor product as claimed in claim 15, wherein each of first, second, third and fourth switches comprises a single insulated-gate field-effect-transistor.

18. A semiconductor product as claimed in claim 15, configured as an H-bridge.

19. A method, comprising:

providing, using doped semiconductor, an interconnecting semiconductor electrode;

providing, using doped semiconductor, a first vertical insulated-gate field-effect-transistor that has the interconnecting semiconductor electrode as a first current electrode and a second vertical insulated-gate field-effect-transistor that has the interconnecting semiconductor electrode as a first current electrode, the interconnecting electrode interconnecting the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor; and

providing, using doped semiconductor, a first semiconductor electrode and a second semiconductor electrode, wherein the first semiconductor electrode forms a second current electrode of the first vertical insulated-gate field-effect-transistor and the second semiconductor electrode forms a second current electrode of the second vertical insulated-gate field-effect-transistor.

20. A method as claimed in claim 19, comprising:

providing, using doped semiconductor, a second interconnecting semiconductor electrode defining a semiconductor electrode;

providing, using doped semiconductor, a third vertical insulated-gate field-effect-transistor that has the second interconnecting semiconductor electrode as a first current electrode and a fourth vertical insulated-gate field-effect-transistor that has the second interconnecting semiconductor electrode as a first current electrode, the second interconnecting electrode interconnecting the third vertical insulated gate field-effect-transistor and the fourth vertical insulated gate field-effect-transistor;

wherein providing, using doped semiconductor, the first semiconductor electrode forms a second current electrode of the fourth vertical insulated-gate field-effect-transistor and a second current electrode of the first vertical insulated-gate field-effect-transistor and wherein providing, using doped semiconductor, the second semiconductor electrode forms a second current electrode of the third vertical insulated-gate field-effect-transistor and a second current electrode of the second vertical insulated-gate field-effect-transistor.