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SEMICONDUCTOR DEVICE HAVING STRESSOR AND METHOD OF FORMING THE SAME

  • US 20160163860A1
  • Filed: 07/23/2015
  • Published: 06/09/2016
  • Est. Priority Date: 12/08/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate comprising a first trench, a second trench, wherein the trenches are spaced apart from each other, and a channel area is defined between the trenches;

    a gate dielectric layer disposed on the channel area;

    a gate electrode disposed on the gate dielectric layer; and

    a stressor including a plurality of semiconductor layers formed in the first trench and the second trench and a plurality of interlayers formed between the semiconductor layers,wherein sidewalls of the first trench and the second trench are v-shaped.

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