SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
First Claim
1. A semiconductor device structure, comprising:
- a semiconductor substrate;
a first gate stack over the semiconductor substrate;
a second gate stack over the semiconductor substrate;
an erase gate between the first gate stack and the second gate stack, wherein the erase gate has a recess recessed toward the semiconductor substrate;
a first word line adjacent to the first gate stack;
a second word line adjacent to the second gate stack;
a first spacer over a top surface of the erase gate; and
a second spacer over the top surface of the erase gate, wherein the first spacer and the second spacer are separated from each other.
1 Assignment
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Accused Products
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The semiconductor device structure includes a second gate stack over the semiconductor substrate. The semiconductor device structure includes an erase gate between the first gate stack and the second gate stack. The erase gate has a recess recessed toward the semiconductor substrate. The semiconductor device structure includes a first word line adjacent to the first gate stack. The semiconductor device structure includes a second word line adjacent to the second gate stack.
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Citations
25 Claims
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1. A semiconductor device structure, comprising:
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a semiconductor substrate; a first gate stack over the semiconductor substrate; a second gate stack over the semiconductor substrate; an erase gate between the first gate stack and the second gate stack, wherein the erase gate has a recess recessed toward the semiconductor substrate; a first word line adjacent to the first gate stack; a second word line adjacent to the second gate stack; a first spacer over a top surface of the erase gate; and a second spacer over the top surface of the erase gate, wherein the first spacer and the second spacer are separated from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 21, 22, 23, 24, 25)
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9. A semiconductor device structure, comprising:
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a semiconductor substrate; a first gate stack over the semiconductor substrate; a second gate stack over the semiconductor substrate; an erase gate between the first gate stack and the second gate stack, wherein the erase gate has a recess recessed toward the semiconductor substrate; a first spacer over the erase gate and adjacent to the first gate stack; a second spacer over the erase gate and adjacent to the second gate stack, wherein a first portion of the first spacer and a second portion of the second spacer are in the recess; a first word line adjacent to the first gate stack; and a second word line adjacent to the second gate stack. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16-20. -20. (canceled)
Specification