Optoelectronic Semiconductor Chip

• US 20160172545A1
• Filed: 06/25/2014
• Published: 06/16/2016
• Est. Priority Date: 07/16/2013
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Engl, Karl, Hartung, Georg, Eibl, Johann, Huber, Michael, Maute, Markus
• Granted Patent: US 10,014,444 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.

Claims

1-14. -14. (canceled)

15. An optoelectronic semiconductor chip comprising:

a semiconductor body, which comprises an n-conductive region, an active region configured to generate electromagnetic radiation and a p-conductive region. wherein the n-conductive region is arranged on a side of the active region remote from the p-conductive region;

a first mirror layer arranged on a bottom of the p-conductive region to reflect the electromagnetic radiation, wherein the active region is arranged on a side of the p-conductive region remote from the first mirror layer;

a first encapsulation layer formed with an electrically insulating material;

a second encapsulation layer formed with an electrically insulating material; and

a third encapsulation layer formed with an electrically insulating material;

wherein the first, second and third encapsulation layers cover the semiconductor body in places on an outer face thereof;

wherein the third encapsulation layer completely covers the first mirror layer on the side thereof remote from the p-conductive region and in places is in direct contact with the first mirror layer;

wherein the second encapsulation layer and the third encapsulation layer are in places in direct contact with one another in a region to the side of the first mirror layer; and

wherein the second encapsulation layer and the third encapsulation layer are ALD layers.

16. The optoelectronic semiconductor chip according to claim 15, further comprising a second mirror layer, which is arranged on a bottom of the third encapsulation layer remote from the semiconductor body, wherein the second mirror layer projects in a lateral direction over the outer face of the semiconductor body.

17. The optoelectronic semiconductor chip according to claim 15, wherein the first encapsulation layer on the outer face of the semiconductor body extends from the active region along the p-conductive region to a side face of the first mirror layer, wherein the first encapsulation layer is in direct contact with the first mirror layer.

18. The optoelectronic semiconductor chip according to claim 15, further comprising a fourth encapsulation layer, which completely covers the third encapsulation layer on the side thereof remote from the semiconductor body and is in direct contact at least in places with the third encapsulation layer.

19. The optoelectronic semiconductor chip according to claim 18, further comprising a second mirror layer arranged on the bottom of an n-contact material remote from the n-conductive region, wherein the third encapsulation layer and the fourth encapsulation layer are arranged in places between the first mirror layer and the second mirror layer.

20. The optoelectronic semiconductor chip according to claim 19, wherein the second mirror layer projects in a lateral direction over the outer face of the semiconductor body.

21. The optoelectronic semiconductor chip according to claim 19, wherein the second mirror layer extends at least in places beneath a contact region, wherein the second mirror layer is electrically insulated from the contact region at least by the third encapsulation layer and the contact region is provided for p-side connection of the semiconductor chip from outside the semiconductor chip.

22. The optoelectronic semiconductor chip according to claim 15, further comprising a fifth encapsulation layer, which is an ALD layer, wherein the fifth encapsulation layer completely covers the outer face of the semiconductor body at least at the n-conductive region and is in direct contact with the second encapsulation layer in places to the side of the semiconductor body.

23. The optoelectronic semiconductor chip according to claim 22, wherein the second encapsulation layer comprises traces of an etching process in the region in contact with the fifth encapsulation layer.

24. The optoelectronic semiconductor chip according to claim 22, wherein the second encapsulation layer is thinner in a region in contact with the fifth encapsulation layer than in a region in which there is no contact between the second encapsulation layer and the fifth encapsulation layer.

25. The optoelectronic semiconductor chip according to claim 22, further comprising a through-via that extends through the p-conductive region and the active region into the n-conductive region;

wherein the through-via comprises an n-contact material, by way of which the n-conductive region is electrically contactable; and

wherein apart from the through-via, the semiconductor body is completely surrounded by the third encapsulation layer and the fifth encapsulation layer.

26. The optoelectronic semiconductor chip according to claim 25, wherein the first, second and third encapsulation layers directly adjoin the n-contact material in places.

27. The optoelectronic semiconductor chip according to claim 15, further comprising a through-via that extends through the p-conductive region and the active region into the n-conductive region, wherein the through-via comprises an n-contact material, by way of which the n-conductive region is electrically contactable.

28. The optoelectronic semiconductor chip according to claim 27, further comprising:

a fourth encapsulation layer, which completely covers the third encapsulation layer on the side thereof remote from the semiconductor body and is in direct contact at least in places with the third encapsulation layer; and

a fifth encapsulation layer, which is an ALD layer, wherein the fifth encapsulation layer completely covers the outer face of the semiconductor body at least at the n-conductive region and is in direct contact with the second encapsulation layer in places to the side of the semiconductor body;

wherein apart from the through-via, the semiconductor body is completely surrounded by the third encapsulation layer and the fifth encapsulation layer; and

wherein the first, second, third and fourth encapsulation layers directly adjoin the n-contact material in places.

29. The optoelectronic semiconductor chip according to claim 15, wherein a distance between a side face of the first mirror layer and a side face of the n-conductive region in a lateral direction is at most 2.5 μ

m.

30. The optoelectronic semiconductor chip according to claim 15, wherein the p-conductive region and the first mirror layer are covered at their side faces in places by a metallic encapsulation layer, wherein an encapsulation layer sequence extends between the metallic encapsulation layer and the side faces.

31. The optoelectronic semiconductor chip according to claim 30, wherein the encapsulation layer sequence is formed by the first encapsulation layer and the second encapsulation layer.

32. An optoelectronic semiconductor chip comprising:

a semiconductor body, which comprises an n-conductive region, an active region provided to generate electromagnetic radiation and a p-conductive region, wherein the n-conductive region is arranged on a side of the active region remote from the p-conductive region;

a first mirror layer provided to reflect electromagnetic radiation, the first mirror layer being arranged on a bottom of the p-conductive region, wherein the active region is arranged on a side of the p-conductive region remote from the first mirror layer;

a second mirror layer provided to reflect electromagnetic radiation, the second mirror layer projecting in a lateral direction over an outer face of the semiconductor body;

a first encapsulation layer formed with an electrically insulating material and covering the semiconductor body in places on the outer face of the semiconductor body; and

a second encapsulation layer formed with an electrically insulating material and covering the semiconductor body in places on the outer face of the semiconductor body, wherein the second encapsulation layer is an ALD layer, wherein the second mirror layer is arranged on the bottom of the first and second encapsulation layer remote from the semiconductor body.

33. The optoelectronic semiconductor chip according to claim 32, further comprising a third encapsulation layer, which is formed with an electrically insulating material;

wherein the second encapsulation layer and the third encapsulation layer are in places in direct contact with one another in a region to the side of the first mirror layer;

wherein the first, second and third encapsulation layers cover the semiconductor body in places on the outer face thereof;

wherein the third encapsulation layer is an ALD layer; and

wherein the third encapsulation layer completely covers the first mirror layer on the side thereof remote from the p-conductive region and in places is in direct contact with the first mirror layer.